In this work, nanodiodes comprised of n-GaN nanowires on p-diamond substrates are investigated. The electric transport properties are discussed on the basis of simulations and determined experimentally for individual p-diamond/n-GaN nanodiodes by applying conductive atomic force microscopy. For low doping concentrations, a high rectification ratio is observed. The fabrication of a prototype nanoLED device on the basis of ensemble nanowire contacts is presented, showing simultaneous electroluminescence in the UV and the green spectral range which can be ascribed to hole injection into the n-GaN nanowires and electron injection into the p-diamond, respectively. In addition, the operation and heat distribution of the nanoLED device are visualized by active thermographic imaging.

1.
J. G.
Felbinger
,
M.
Chandra
,
Y.
Sun
,
L. F.
Eastman
,
J.
Wasserbauer
,
F.
Faili
,
D.
Babic
,
D.
Francis
, and
F.
Ejeckam
,
IEEE Electron Devices Lett.
28
,
948
(
2007
).
2.
Q.
Diduck
,
J.
Felbinger
,
L.
Eastman
,
D.
Francis
,
J.
Wasserbauer
,
F.
Faili
,
D.
Babić
, and
F.
Ejeckam
,
Electron. Lett.
45
,
758
(
2009
).
3.
M.
Alomari
,
A.
Dussaigne
,
D.
Martin
,
N.
Grandjean
,
C.
Gaquiere
, and
E.
Kohn
,
Electron. Lett.
46
,
299
(
2010
).
4.
K.
Hirama
,
Y.
Taniyasu
, and
M.
Kasu
,
Appl. Phys. Lett.
98
,
162112
(
2011
).
5.
J. W.
Pomeroy
,
M.
Bernardoni
,
D. C.
Dumka
,
D. M.
Fanning
, and
M.
Kuball
,
Appl. Phys. Lett.
104
,
083513
(
2014
).
6.
P. H.
Chen
,
C. L.
Lin
,
Y.
Liu
,
T. Y.
Chung
, and
C.-Y.
Liu
,
IEEE Photonics Technol. Lett.
20
,
845
(
2008
).
7.
C. R.
Miskys
,
J. A.
Garrido
,
C. E.
Nebel
,
M.
Hermann
,
O.
Ambacher
,
M.
Eickhoff
, and
M.
Stutzmann
,
Appl. Phys. Lett.
82
,
290
(
2003
).
8.
K.
Hirama
,
Y.
Taniyasu
, and
M.
Kasu
,
Appl. Phys. Lett.
98
,
011908
(
2011
).
9.
F.
Schuster
,
F.
Furtmayr
,
R.
Zamani
,
C.
Magén
,
J. R.
Morante
,
J.
Arbiol
,
J. A.
Garrido
, and
M.
Stutzmann
,
Nano Lett.
12
,
2199
(
2012
).
10.
F.
Schuster
,
S.
Weiszer
,
M.
Hetzl
,
A.
Winnerl
,
J. A.
Garrido
, and
M.
Stutzmann
,
J. Appl. Phys.
116
,
054301
(
2014
).
11.
J.-P.
Lagrange
,
A.
Deneuville
, and
E.
Gheeraert
,
Diamond Relat. Mater.
7
,
1390
(
1998
).
12.
F.
Schuster
,
A.
Winnerl
,
S.
Weiszer
,
M.
Hetzl
,
J. A.
Garrido
, and
M.
Stutzmann
,
J. Appl. Phys.
117
,
044307
(
2015
).
13.
See supplementary material at http://dx.doi.org/10.1063/1.4933099 for an estimation of the diamond/GaN valence band offset based on electric transport measurements.
14.
F.
Schuster
,
M.
Hetzl
,
C.
Magen
,
J.
Arbiol
,
J. A.
Garrido
, and
M.
Stutzmann
,
J. Appl. Phys.
115
,
213508
(
2014
).
15.
F.
Schuster
,
B.
Laumer
,
R. R.
Zamani
,
C.
Magén
,
J. R.
Morante
,
J.
Arbiol
, and
M.
Stutzmann
,
ACS Nano
8
,
4376
(
2014
).
16.
R.
Calarco
,
M.
Marso
,
T.
Richter
,
A. I.
Aykanat
,
R.
Meijers
,
A.
Hart
,
T.
Stoica
, and
H.
Lüth
,
Nano Lett.
5
,
981
(
2005
).
17.
H.
Kawarada
,
Y.
Yokota
,
Y.
Mori
,
K.
Nishimura
, and
A.
Hiraki
,
J. Appl. Phys.
67
,
983
(
1990
).
18.
F.
Schuster
,
M.
Hetzl
,
S.
Weiszer
,
J. A.
Garrido
,
M.
de la Mata
,
C.
Magen
,
J.
Arbiol
, and
M.
Stutzmann
,
Nano Lett.
15
,
1773
(
2015
).

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