We investigate the properties and characteristics of planar Ti/TiOx/Ti junctions, which consist of transverse TiOx lines drawn on Ti test patterns. Junctions are elaborated by means of local anodic oxidation using atomic force microscopy. An irreversible morphological transformation occurring in a reproducible manner is observed when these planar junctions are electrically stressed under ambient atmosphere. Structural and chemical analyses based on transmission electron microscopy techniques reveal the extension of the initial amorphous TiOx into a crystalline rutile phase. This irreversible transformation is proven to vanish completely if the electrical stress occurs under vacuum atmosphere. Finally, we carry out temperature dependent electrical measurements in order to elucidate their conduction mechanism: Schottky emission above an ultra-low potential barrier is assumed to dominate under vacuum atmosphere whereas ionic conduction seems to prevail in air.
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14 October 2015
Research Article|
October 08 2015
Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx/Ti junctions Available to Purchase
N. Guillaume;
N. Guillaume
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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E. Puyoo;
E. Puyoo
a)
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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M. Le Berre;
M. Le Berre
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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D. Albertini;
D. Albertini
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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N. Baboux;
N. Baboux
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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C. Chevalier;
C. Chevalier
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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K. Ayadi;
K. Ayadi
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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J. Grégoire;
J. Grégoire
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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B. Gautier;
B. Gautier
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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F. Calmon
F. Calmon
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
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N. Guillaume
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
E. Puyoo
a)
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
M. Le Berre
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
D. Albertini
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
N. Baboux
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
C. Chevalier
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
K. Ayadi
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
J. Grégoire
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
B. Gautier
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
F. Calmon
Institut des Nanotechnologies de Lyon,
Université de Lyon
, INL UMR 5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 118, 144502 (2015)
Article history
Received:
July 21 2015
Accepted:
September 27 2015
Citation
N. Guillaume, E. Puyoo, M. Le Berre, D. Albertini, N. Baboux, C. Chevalier, K. Ayadi, J. Grégoire, B. Gautier, F. Calmon; Study and characterization of the irreversible transformation of electrically stressed planar Ti/TiOx/Ti junctions. J. Appl. Phys. 14 October 2015; 118 (14): 144502. https://doi.org/10.1063/1.4932646
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