Raman measurements of a Fano-type surface phonon mode associated with Dirac surface states (SS) in Bi2Se3 topological insulator thin films allowed an unambiguous determination of the electron-phonon coupling strength in Dirac SS as a function of film thickness ranging from 2 to 40 nm. A non-monotonic enhancement of the electron-phonon coupling strength with maximum for the 8–10 nm thick films was observed. The non-monotonicity is suggested to originate from plasmon-phonon coupling which enhances electron-phonon coupling when free carrier density in Dirac SS increases with decreasing film thickness and becomes suppressed for thinnest films when anharmonic coupling between in-plane and out-of-plane phonon modes occurs. The observed about four-fold enhancement of electron-phonon coupling in Dirac SS of the 8–10 nm thick Bi2Se3 films with respect to the bulk samples may provide new insights into the origin of superconductivity in this-type materials and their applications.
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7 October 2015
Research Article|
October 07 2015
Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3
Yuri D. Glinka;
Yuri D. Glinka
a)
1Department of Physics and Astronomy,
West Virginia University
, Morgantown, West Virginia 26506-6315, USA
2Institute of Physics,
National Academy of Sciences of Ukraine
, Kiev 03028, Ukraine
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Sercan Babakiray;
Sercan Babakiray
1Department of Physics and Astronomy,
West Virginia University
, Morgantown, West Virginia 26506-6315, USA
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David Lederman
David Lederman
1Department of Physics and Astronomy,
West Virginia University
, Morgantown, West Virginia 26506-6315, USA
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
J. Appl. Phys. 118, 135713 (2015)
Article history
Received:
July 27 2015
Accepted:
September 27 2015
Citation
Yuri D. Glinka, Sercan Babakiray, David Lederman; Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3. J. Appl. Phys. 7 October 2015; 118 (13): 135713. https://doi.org/10.1063/1.4932667
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