The electron spin dynamics under variable uniaxial strain is investigated in bulk cubic GaN by time-resolved magneto-optical Kerr-rotation spectroscopy. Spin relaxation is found to be approximately independent of the applied strain, in complete agreement with estimates for Dyakonov-Perel spin relaxation. Our findings clearly exclude strain-induced relaxation as an effective mechanism for spin relaxation in cubic GaN.
References
1.
S. E.
Thompson
and S.
Parthasarathy
, Mater. Today
9
, 20
(2006
).2.
S. A.
Wolf
, D. D.
Awschalom
, R. A.
Buhrman
, J. M.
Daughton
, S.
von Molnár
, M. L.
Roukes
, A. Y.
Chtchelkanova
, and D. M.
Treger
, Science
294
, 1488
(2001
).3.
Semiconductor Spintronics and Quantum Computation
, edited by D. D.
Awschalom
and N.
Samarth
(Springer-Verlag
, Berlin
, 2002
).4.
Spin Physics in Semiconductors
, edited by M. I.
Dyakonov
(Springer-Verlag
, Berlin
, 2008
).5.
I.
Zutic
, J.
Fabian
, and S. D.
Sarma
, Rev. Mod. Phys.
76
, 323
(2004
).6.
D. D.
Awschalom
and M. E.
Flatté
, Nat. Phys.
3
, 153
(2007
).7.
E. I.
Rashba
, Sov. Phys. Solid State
2
, 1109
(1960
).8.
M.
Furis
, D. L.
Smith
, S. A.
Crooker
, and J. L.
Reno
, Appl. Phys. Lett.
89
, 102102
(2006
).9.
A.
Balocchi
, Q. H.
Duong
, P.
Renucci
, B. L.
Liu
, C.
Fontaine
, T.
Amand
, D.
Lagarde
, and X.
Marie
, Phys. Rev. Lett.
107
, 136604
(2011
).10.
J. H.
Jiang
and M. W.
Wu
, Phys. Rev. B
79
, 125206
(2009
).11.
Y.
Kato
, R. C.
Myers
, A. C.
Gossard
, and D. D.
Awschalom
, Nature
427
, 50
(2004
).12.
Y. K.
Kato
, R. C.
Myers
, A. C.
Gossard
, and D. D.
Awschalom
, Phys. Rev. Lett.
93
, 176601
(2004
).13.
Y. K.
Kato
, R. C.
Myers
, A. C.
Gossard
, and D. D.
Awschalom
, Appl. Phys. Lett.
87
, 022503
(2005
).14.
L.
Jiang
and M. W.
Wu
, Phys. Rev. B
72
, 033311
(2005
).15.
S. A.
Crooker
and D. L.
Smith
, Phys. Rev. Lett.
94
, 236601
(2005
).16.
M.
Beck
, C.
Metzner
, S.
Malzer
, and G. H.
Döhler
, Europhys. Lett.
75
, 597
(2006
).17.
H.
Knotz
, A. W.
Holleitner
, J.
Stephens
, R. C.
Myers
, and D. D.
Awschalom
, Appl. Phys. Lett.
88
, 241918
(2006
).18.
D. J.
English
, P. G.
Lagoudakis
, R. T.
Harley
, P. S.
Eldridge
, J.
Hübner
, and M.
Oestreich
, Phys. Rev. B
84
, 155323
(2011
).19.
J.
Rudolph
, R.
Hey
, and P. V.
Santos
, Phys. Rev. Lett.
99
, 047602
(2007
).20.
G. E.
Pikus
, V. A.
Marushchak
, and A. N.
Titkov
, Sov. Phys. Semicond.
22
, 115
(1988
).21.
M. I.
Dyakonov
, V. A.
Marushchak
, V. I.
Perel
, M. N.
Stepanova
, and A. N.
Titkov
, Bull. Acad. Sci. USSR, Phys. Ser.
47
, 23
(1983
).22.
M. I.
Dyakonov
, V. A.
Marushchak
, V. I.
Perel
, and A. N.
Titkov
, Sov. Phys. JETP
63
, 655
(1986
).23.
V. I.
Safarov
and A. N.
Titkov
, Phys. B+C
117–118
, 497
(1983
).24.
H.
Sanada
, T.
Sogawa
, H.
Gotoh
, K.
Onomitsu
, M.
Kohda
, J.
Nitta
, and P. V.
Santos
, Phys. Rev. Lett.
106
, 216602
(2011
).25.
Optical Orientation
, edited by F.
Meier
and B. P.
Zakharchenya
(North-Holland
, Amsterdam
, 1984
).26.
J. H.
Buß
, J.
Rudolph
, T.
Schupp
, D. J.
As
, K.
Lischka
, and D.
Hägele
, Appl. Phys. Lett.
97
, 062101
(2010
).27.
J.
Rudolph
, J. H.
Buß
, and D.
Hägele
, Phys. Status Solidi B
251
, 1850
(2014
);J. H.
Buß
, A.
Schaefer
, T.
Schupp
, D. J.
As
, D.
Hägele
, and J.
Rudolph
, Appl. Phys. Lett.
105
, 182404
(2014
).28.
J. H.
Buß
, J.
Rudolph
, F.
Natali
, F.
Semond
, and D.
Hägele
, Appl. Phys. Lett.
95
, 192107
(2009
).29.
J. H.
Buß
, J.
Rudolph
, F.
Natali
, F.
Semond
, and D.
Hägele
, Phys. Rev. B
81
, 155216
(2010
).30.
J. H.
Buß
, J.
Rudolph
, S.
Starosielec
, A.
Schaefer
, F.
Semond
, Y.
Cordier
, A. D.
Wieck
, and D.
Hägele
, Phys. Rev. B
84
, 153202
(2011
).31.
S.
Krishnamurthy
, M.
van Schilfgaarde
, and N.
Newman
, Appl. Phys. Lett.
83
, 1761
(2003
).32.
O.
Brandt
, in Group III Nitride Semiconductor Compounds
, edited by B.
Gil
(Clarendon Press
, Oxford
, 1998
).33.
R. M.
Kemper
, T.
Schupp
, M.
Häberlen
, T.
Niendorf
, H.-J.
Maier
, A.
Dempewolf
, F.
Bertram
, J.
Christen
, R.
Kirste
, A.
Hoffmann
, J.
Lindner
, and D. J.
As
, J. Appl. Phys.
110
, 123512
(2011
).34.
R.
Klann
, O.
Brandt
, H.
Yang
, H. T.
Grahn
, K.
Ploog
, and A.
Trampert
, Phys. Rev. B
52
, R11615
(1995
).35.
G.
Bentoumi
, A.
Deneuville
, E.
Bustarret
, B.
Daudin
, and G.
Feuillet
, Thin Solid Films
364
, 114
(2000
).36.
D. J.
As
, in III-Nitride Semiconductor materials: Growth
, edited by M. O.
Manasreh
andI. T.
Ferguson
(Taylor and Francis
, New York
, 2003
);D. J.
As
, S.
Potthast
, J.
Schörmann
, S. F.
Li
, K.
Lischka
, H.
Nagasawa
, and M.
Abe
, Mater. Sci. Forum
527
, 1489
(2006
).37.
We used the two-component epoxy UHU plus endfest 300 from UHU GmbH, Bühl, Germany. Special care was taken in proper glueing of the samples using a homemade press device to achieve thin, uniform epoxy layers. Almost no creep or drift was observed.
38.
Part No. PSt 150/5x5/7 from Piezomechanik Dr. Lutz Pickelmann GmbH, Munich, Germany.
39.
M.
Shayegan
, K.
Karrai
, Y. P.
Shkolnikov
, K.
Vakili
, E. P. D.
Poortere
, and S.
Manus
, Appl. Phys. Lett.
83
, 5235
(2003
).40.
Part No. SGD-1.5/120-LY11 from OMEGA Engineering, Stamford, Connecticut, USA.
41.
The strain values given refer to the average of the strain measured on the back of the piezo and on top of the sample.
42.
M. W.
Bayerl
, M. S.
Brandt
, T.
Graf
, O.
Ambacher
, J. A.
Majewski
, M.
Stutzmann
, D. J.
As
, and K.
Lischka
, Phys. Rev. B
63
, 165204
(2001
).43.
M.
Fanciulli
, T.
Lei
, and T. D.
Moustakas
, Phys. Rev. B
48
, 15144
(1993
).44.
C.
Jagannath
and R. L.
Aggarwal
, Phys. Rev. B
32
, 2243
(1985
).45.
M.
Kriechbaum
, R.
Meisels
, F.
Kuchar
, and E.
Fantner
, Phys. B+C
117–118
, 444
(1983
).46.
M. I.
Dyakonov
and V. I.
Perel
, Sov. Phys. Solid State
13
, 3023
(1972
).47.
M. W.
Wu
, J. H.
Jiang
, and M. Q.
Weng
, Phys. Rep.
493
, 61
(2010
).48.
G.
Dresselhaus
, Phys. Rev.
100
, 580
(1955
).49.
M.
Cardona
, V. A.
Maruschak
, and A. N.
Titkov
, Solid State Commun.
50
, 701
(1984
).50.
A. N.
Chantis
, M.
Cardona
, N. E.
Christensen
, D. L.
Smith
, M.
van Schilfgaarde
, T.
Kotani
, A.
Svane
, and R. C.
Albers
, Phys. Rev. B
78
, 075208
(2008
).51.
D.
Hägele
, S.
Döhrmann
, J.
Rudolph
, and M.
Oestreich
, Adv. Solid State Phys.
45
, 253
(2005
).52.
J.
Fabian
, A.
Matos-Abiaguea
, C.
Ertlera
, P.
Stano
, and I.
Zutic
, Acta Phys. Slovaca
57
, 565
(2007
).53.
R.
Winkler
, Spin-Orbit Coupling Effects in Two-Dimensional Electron and Hole Systems
(Springer
, Berlin
, 2003
).54.
S.
Döhrmann
, D.
Hägele
, J.
Rudolph
, M.
Bichler
, D.
Schuh
, and M.
Oestreich
, Phys. Rev. Lett.
93
, 147405
(2004
).55.
Z. G.
Yu
, S.
Krishnamurthy
, M.
van Schilfgaarde
, and N.
Newman
, Phys. Rev. B
71
, 245312
(2005
).56.
K.
Shen
, J.
Fu
, and M.
Wu
, Solid State Commun.
151
, 1924
(2011
).57.
J. Y.
Fu
and M. W.
Wu
, J. Appl. Phys.
104
, 093712
(2008
).58.
M.
Cardona
, N. E.
Christensen
, and G.
Fasol
, Phys. Rev. B
38
, 1806
(1988
).59.
S. K.
Pugh
, D. J.
Dugdale
, S.
Brand
, and R. A.
Abram
, Semicond. Sci. Technol.
14
, 23
(1999
).60.
G.
Ramírez-Flores
, H.
Navarro-Contreras
, A.
Lastras-Martínez
, R. C.
Powell
, and J. E.
Greene
, Phys. Rev. B
50
, 8433
(1994
).61.
B.
Pödör
, Phys. Status Solidi B
16
, K167
(1966
).62.
R. L.
Petritz
and W. W.
Scanlon
, Phys. Rev.
97
, 1620
(1955
).63.
D.
Chattopadhyay
and H. J.
Queisser
, Rev. Mod. Phys.
53
, 745
(1981
).64.
P. H.
Song
and K. W.
Kim
, Phys. Rev. B
66
, 035207
(2002
).65.
J.
Bardeen
and W.
Shockley
, Phys. Rev.
80
, 72
(1950
).66.
D. J.
As
, D.
Schikora
, A.
Greiner
, M.
Lübbers
, J.
Mimkes
, and K.
Lischka
, Phys. Rev. B
54
, R11118
(1996
).67.
M.
Kohno
, T.
Nakamura
, T.
Kataoka
, R.
Katayama
, and K.
Onabe
, Phys. Status Solidi C
5
, 1805
(2008
);J. N.
Kuznia
, J. W.
Yang
, Q. C.
Chen
, S.
Krishnankutty
, M. A.
Khan
, T.
George
, and J.
Frietas
, Appl. Phys. Lett.
65
, 2407
(1994
);H.
Okumura
, S.
Misawa
, T.
Okahisa
, and S.
Yoshida
, J. Cryst. Growth
136
, 361
(1994
);S. V.
Novikov
, N. M.
Stanton
, R. P.
Campion
, R. D.
Morris
, H. L.
Geen
, C. T.
Foxon
, and A. J.
Kent
, Semicond. Sci. Technol.
23
, 015018
(2008
).68.
D. J.
As
, T. F. D.
, Schikora
, K.
Lischka
, V.
Cimalla
, J.
Pezoldt
, R.
Goldhahn
, S.
Kaiser
, and W.
Gebhardt
, Appl. Phys. Lett.
76
, 1686
(2000
).69.
D. J.
As
and K.
Lischka
, in Nonpolar Cubic III-Nitrides: From the Basics of Growth to Device Applications
, edited by M.
Henini
(Elsevier
, Oxford
, 2013
).70.
D.
Jena
, Phys. Rev. B
70
, 245203
(2004
).71.
Here we corrected for several misprints in the English version of the corresponding section of Ref. 25, including the correct value of and inconsistent use of γ3.
72.
We used the values γe = 0.84 eV Å3, nDisl = 1 × 1010 cm−2 for sample A and nDisl = 2 × 109 cm−2 for sample B, respectively, as well as and for sample A and for sample B, respectively, for the calculation of .
73.
V. I.
Melnikov
and E. I.
Rashba
, Sov. Phys. JETP
34
, 1353
(1972
).74.
E. Y.
Sherman
, Appl. Phys. Lett.
82
, 209
(2003
).75.
76.
G. L.
Bir
, A. G.
Aronov
, and G. E.
Pikus
, Sov. Phys. JETP
42
, 705
(1976
).77.
G.
Wang
, C. R.
Zhu
, B. L.
Liu
, H.
Ye
, A.
Balocchi
, T.
Amand
, B.
Urbaszek
, H.
Yang
, and X.
Marie
, Phys. Rev. B
90
, 121202
(2014
).78.
J. H.
Buß
, J.
Rudolph
, S.
Shvarkov
, H.
Hardtdegen
, A. D.
Wieck
, and D.
Hägele
, Appl. Phys. Lett.
102
, 192102
(2013
).© 2015 AIP Publishing LLC.
2015
AIP Publishing LLC
You do not currently have access to this content.