We report on fabrication of MoS2 thin-film transistors (TFTs) and experimental investigations of their high-temperature current-voltage characteristics. The measurements show that MoS2 devices remain functional to temperatures of at least as high as 500 K. The temperature increase results in decreased threshold voltage and mobility. The comparison of the direct current (DC) and pulse measurements shows that the direct current sub-linear and super-linear output characteristics of MoS2 thin-films devices result from the Joule heating and the interplay of the threshold voltage and mobility temperature dependences. At temperatures above 450 K, a kink in the drain current occurs at zero gate voltage irrespective of the threshold voltage value. This intriguing phenomenon, referred to as a “memory step,” was attributed to the slow relaxation processes in thin films similar to those in graphene and electron glasses. The fabricated MoS2 thin-film transistors demonstrated stable operation after two months of aging. The obtained results suggest new applications for MoS2 thin-film transistors in extreme-temperature electronics and sensors.
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14 February 2015
Research Article|
February 10 2015
High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics
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C. Jiang;
C. Jiang
1Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering,
University of California—Riverside
, Riverside, California 92521, USA
2Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California—Riverside
, Riverside, California 92521, USA
Search for other works by this author on:
S. L. Rumyantsev;
S. L. Rumyantsev
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
4
Ioffe Physical-Technical Institute
, St. Petersburg 194021, Russia
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R. Samnakay
;
R. Samnakay
1Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering,
University of California—Riverside
, Riverside, California 92521, USA
2Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California—Riverside
, Riverside, California 92521, USA
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M. S. Shur
;
M. S. Shur
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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A. A. Balandin
A. A. Balandin
a)
1Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering,
University of California—Riverside
, Riverside, California 92521, USA
2Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California—Riverside
, Riverside, California 92521, USA
Search for other works by this author on:
C. Jiang
1,2
S. L. Rumyantsev
3,4
R. Samnakay
1,2
M. S. Shur
3
A. A. Balandin
1,2,a)
1Nano-Device Laboratory (NDL), Department of Electrical Engineering, Bourns College of Engineering,
University of California—Riverside
, Riverside, California 92521, USA
2Phonon Optimized Engineered Materials (POEM) Center, Materials Science and Engineering Program,
University of California—Riverside
, Riverside, California 92521, USA
3Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
4
Ioffe Physical-Technical Institute
, St. Petersburg 194021, Russia
a)
Author to whom correspondence should b addressed. Electronic mail: [email protected]
J. Appl. Phys. 117, 064301 (2015)
Article history
Received:
December 20 2014
Accepted:
January 12 2015
Citation
C. Jiang, S. L. Rumyantsev, R. Samnakay, M. S. Shur, A. A. Balandin; High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics. J. Appl. Phys. 14 February 2015; 117 (6): 064301. https://doi.org/10.1063/1.4906496
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