We describe a new type of optically sensitive tunable capacitor with a wide band response ranging from the ultraviolet (245 nm) to the near infrared (880 nm). It is based on a planar Metal-Oxide-Semiconductor (MOS) structure fabricated on an insulator on silicon substrate where the insulator layer comprises a double layer dielectric stack of SiO2-HfO2. Two operating configurations have been examined, a single diode and a pair of back-to-back connected devices, where either one or both diodes are illuminated. The varactors exhibit, in all cases, very large sensitivities to illumination. Near zero bias, the capacitance dependence on illumination intensity is sub linear and otherwise it is nearly linear. In the back-to-back connected configuration, the reverse biased diode acts as a light tunable resistor whose value affects strongly the capacitance of the second, forward biased, diode and vice versa. The proposed device is superior to other optical varactors in its large sensitivity to illumination in a very broad wavelength range (245 nm–880 nm), the strong capacitance dependence on voltage and the superior current photo responsivity. Above and beyond that structure requires a very simple fabrication process which is CMOS compatible.
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28 January 2015
Research Article|
January 30 2015
Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates
V. Mikhelashvili
;
V. Mikhelashvili
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
2
Russel Berrie Nanotechnology Institute, Technion-Israel Institute of Technology
, Haifa 32000, Israel
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D. Cristea;
D. Cristea
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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B. Meyler;
B. Meyler
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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S. Yofis;
S. Yofis
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Y. Shneider;
Y. Shneider
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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G. Atiya;
G. Atiya
3Department of Materials Science and Engineering
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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T. Cohen-Hyams;
T. Cohen-Hyams
3Department of Materials Science and Engineering
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Y. Kauffmann;
Y. Kauffmann
3Department of Materials Science and Engineering
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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W. D. Kaplan;
W. D. Kaplan
2
Russel Berrie Nanotechnology Institute, Technion-Israel Institute of Technology
, Haifa 32000, Israel
3Department of Materials Science and Engineering
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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G. Eisenstein
G. Eisenstein
1Electrical Engineering Department,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
2
Russel Berrie Nanotechnology Institute, Technion-Israel Institute of Technology
, Haifa 32000, Israel
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J. Appl. Phys. 117, 044503 (2015)
Article history
Received:
October 15 2014
Accepted:
January 18 2015
Citation
V. Mikhelashvili, D. Cristea, B. Meyler, S. Yofis, Y. Shneider, G. Atiya, T. Cohen-Hyams, Y. Kauffmann, W. D. Kaplan, G. Eisenstein; Highly sensitive optically controlled tunable capacitor and photodetector based on a metal-insulator-semiconductor on silicon-on-insulator substrates. J. Appl. Phys. 28 January 2015; 117 (4): 044503. https://doi.org/10.1063/1.4906971
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