Bardeen's model for the non-ideal metal-semiconductor interface was applied to metal-wrapped cylindrical nanowire systems of 30–400 nm in diameter; a significant effect of the nanowire diameter on the non-ideal Schottky barrier height was found. The calculations were performed by solving Poisson's equation in the nanowire, self-consistently with the constraints set by the non-ideal interface conditions; in these calculations, the barrier height is obtained from the solution, and it is not a boundary condition for Poisson's equation. The main finding is that thin nanowires are expected to have meV higher Schottky barriers compared to their thicker counterparts; an effect 3–4 times stronger than the diameter dependence of image-force barrier lowering in similar systems. What lies behind this effect is the electrostatic properties of metal-wrapped nanowires; in particular, since depletion charge is reduced with nanowire radius, the potential drop on the interfacial layer is reduced—leading to the increase of the barrier height with nanowire radius reduction.
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21 January 2015
Research Article|
January 16 2015
On the diameter dependence of metal-nanowire Schottky barrier height
Yonatan Calahorra;
Yonatan Calahorra
a)
Department of Electrical Engineering,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Eilam Yalon
;
Eilam Yalon
Department of Electrical Engineering,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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Dan Ritter
Dan Ritter
b)
Department of Electrical Engineering,
Technion-Israel Institute of Technology
, Haifa 32000, Israel
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a)
Electronic mail: yoncal@tx.technion.ac.il
b)
Electronic mail: ritter@ee.technion.ac.il
J. Appl. Phys. 117, 034308 (2015)
Article history
Received:
October 28 2014
Accepted:
January 07 2015
Citation
Yonatan Calahorra, Eilam Yalon, Dan Ritter; On the diameter dependence of metal-nanowire Schottky barrier height. J. Appl. Phys. 21 January 2015; 117 (3): 034308. https://doi.org/10.1063/1.4906210
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