Bardeen's model for the non-ideal metal-semiconductor interface was applied to metal-wrapped cylindrical nanowire systems of 30–400 nm in diameter; a significant effect of the nanowire diameter on the non-ideal Schottky barrier height was found. The calculations were performed by solving Poisson's equation in the nanowire, self-consistently with the constraints set by the non-ideal interface conditions; in these calculations, the barrier height is obtained from the solution, and it is not a boundary condition for Poisson's equation. The main finding is that thin nanowires are expected to have meV higher Schottky barriers compared to their thicker counterparts; an effect 3–4 times stronger than the diameter dependence of image-force barrier lowering in similar systems. What lies behind this effect is the electrostatic properties of metal-wrapped nanowires; in particular, since depletion charge is reduced with nanowire radius, the potential drop on the interfacial layer is reduced—leading to the increase of the barrier height with nanowire radius reduction.
Skip Nav Destination
Research Article| January 16 2015
On the diameter dependence of metal-nanowire Schottky barrier height
Eilam Yalon ;
Yonatan Calahorra, Eilam Yalon, Dan Ritter; On the diameter dependence of metal-nanowire Schottky barrier height. J. Appl. Phys. 21 January 2015; 117 (3): 034308. https://doi.org/10.1063/1.4906210
Download citation file:
Don't already have an account? Register
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Could not validate captcha. Please try again.