The magnetic properties of double tunnel junctions with perpendicular anisotropy were investigated. Two synthetic antiferromagnetic references are used, while the middle storage magnetic layer can be either a single ferromagnetic or a synthetic antiferromagnetic FeCoB-based layer, with a critical thickness as large as 3.0 nm. Among the different achievable magnetic configurations in zero field, those with either antiparallel references, and single ferromagnetic storage layer, or parallel references, and synthetic antiferromagnetic storage layer, are of particular interest since they allow increasing the efficiency of spin transfer torque writing and the thermal stability of the stored information as compared to single tunnel junctions. The latter configuration can be preferred when stray fields would favour a parallel orientation of the reference layers. In this case, the synthetic antiferromagnetic storage layer is also less sensitive to residual stray fields.
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21 June 2015
Research Article|
June 15 2015
Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer
Léa Cuchet;
Léa Cuchet
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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Bernard Rodmacq;
Bernard Rodmacq
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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Stéphane Auffret;
Stéphane Auffret
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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Ricardo C. Sousa;
Ricardo C. Sousa
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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Ioan L. Prejbeanu;
Ioan L. Prejbeanu
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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Bernard Dieny
Bernard Dieny
Univ. Grenoble Alpes
, INAC-SPINTEC, F-38000 Grenoble, France
; CEA
, INAC-SPINTEC, F-38000 Grenoble, France
; and CNRS
, SPINTEC, F-38000 Grenoble, France
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J. Appl. Phys. 117, 233901 (2015)
Article history
Received:
December 12 2014
Accepted:
June 05 2015
Citation
Léa Cuchet, Bernard Rodmacq, Stéphane Auffret, Ricardo C. Sousa, Ioan L. Prejbeanu, Bernard Dieny; Perpendicular magnetic tunnel junctions with double barrier and single or synthetic antiferromagnetic storage layer. J. Appl. Phys. 21 June 2015; 117 (23): 233901. https://doi.org/10.1063/1.4922630
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