Ballistic transport characteristics of metal-oxide semiconductor field effect transistors (MOSFETs) based on anisotropic two-dimensional materials monolayer HfS2 and phosphorene are explored through quantum transport simulations. We focus on the effects of the channel crystal orientation and the channel length scaling on device performances. Especially, the role of degenerate conduction band (CB) valleys in monolayer HfS2 is comprehensively analyzed. Benchmarking monolayer HfS2 with phosphorene MOSFETs, we predict that the effect of channel orientation on device performances is much weaker in monolayer HfS2 than in phosphorene due to the degenerate CB valleys of monolayer HfS2. Our simulations also reveal that at 10 nm channel length scale, phosphorene MOSFETs outperform monolayer HfS2 MOSFETs in terms of the on-state current. However, it is observed that monolayer HfS2 MOSFETs may offer comparable, but a little bit degraded, device performances as compared with phosphorene MOSFETs at 5 nm channel length.
Skip Nav Destination
Article navigation
7 June 2015
Research Article|
June 01 2015
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
Jiwon Chang
Jiwon Chang
SEMATECH
, 257 Fuller Rd #2200, Albany, New York 12203, USA
Search for other works by this author on:
J. Appl. Phys. 117, 214502 (2015)
Article history
Received:
February 25 2015
Accepted:
May 16 2015
Citation
Jiwon Chang; Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors. J. Appl. Phys. 7 June 2015; 117 (21): 214502. https://doi.org/10.1063/1.4921806
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Sign in via your Institution
Sign in via your InstitutionPay-Per-View Access
$40.00
Citing articles via
Related Content
Excitonic luminescence of iodine-intercalated HfS2
Appl. Phys. Lett. (January 2023)
Internal electric field enhanced photoelectrochemical water splitting in direct Z-scheme GeC/HfS2 heterostructure: A first-principles study
Appl. Phys. Lett. (January 2023)
Band edge states, intrinsic defects, and dopants in monolayer HfS2 and SnS2
Appl. Phys. Lett. (February 2018)
Effect on electronic and optical properties of Frenkel and Schottky defects in HfS2 monolayer
AIP Conference Proceedings (April 2018)
Atomically flat HfO2 layer fabricated by mild oxidation HfS2 with controlled number of layers
J. Appl. Phys. (June 2020)