Platinum silicide Schottky diodes formed on films of polycrystalline Si doped by phosphorus are demonstrated to be efficient and manufacturable CMOS-compatible temperature sensors for microbolometer detectors of radiation. Thin-film platinum silicide/poly-Si diodes have been produced by a CMOS-compatible process on artificial Si3N4/SiO2/Si(001) substrates simulating the bolometer cells. Layer structure and phase composition of the original Pt/poly-Si films and the Pt silicide/poly-Si films synthesized by a low-temperature process have been studied by means of the scanning transmission electron microscopy; they have also been explored by means of the two-wavelength X-ray structural phase analysis and the X-ray photoelectron spectroscopy. Temperature coefficient of voltage for the forward current of a single diode is shown to reach the value of about −2%/ °C in the temperature interval from 25 to 50 °C.

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The fraction of the Pt2Si in the Pt silicide/poly-Si structure determined from STEM and the mass conservation law for the initial Pt2Si sublayer thickness of 5.6 nm in the Pt/poly-Si structure makes approximately 9.9 vol. % (around 12.6 wt. %).

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This behavior of TCU with I and T may be explained by changes in the states at the grain boundaries of the polycrystalline Schottky diodes.33 

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TCR = TCU is not the only figure of merit for bolometers. Signal-to-noise ratio is important as well. We predict a relatively high 1/f-noise in these bolometers like it takes place in polycrystalline VOx or SiGe bolometers.1 At the same time, we expect an increase in signal-to-noise ratio due to size reduction and a large number of diodes on membranes.

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