This work investigates the effect of surface fields on the dynamic resistance of a planar HgCdTe mid-wavelength infrared photodiode from both theoretical and experimental aspects, considering a gated n-on-p diode with the surface potential of its p-region modulated. Theoretical models of the surface leakage current are developed, where the surface tunnelling current in the case of accumulation is expressed by modifying the formulation of bulk tunnelling currents, and the surface channel current for strong inversion is simulated with a transmission line method. Experimental data from the fabricated devices show a flat-band voltage of VFB=5.7V by capacitance-voltage measurement, and then the physical parameters for bulk properties are determined from the resistance-voltage characteristics of the diode working at a flat-band gate voltage. With proper values of the modeling parameters such as surface trap density and channel electron mobility, the theoretical R0A product and corresponding dark current calculated from the proposed model as functions of the gate voltage Vg demonstrate good consistency with the measured values. The R0A product remarkably degenerates when Vg is far below or above VFB because of the surface tunnelling current or channel current, respectively; and it attains the maximum value of 5.7×107Ω·cm2 around the transition between surface depletion and weak inversion when Vg4V, which might result from reduced generation-recombination current.

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