The temperature dependence of the drain current is an important parameter in thin-film transistors. In this paper, we propose that in source-gated transistors (SGTs), this temperature dependence can be controlled and tuned by varying the length of the source electrode. SGTs comprise a reverse biased potential barrier at the source which controls the current. As a result, a large activation energy for the drain current may be present which, although useful in specific temperature sensing applications, is in general deleterious in many circuit functions. With support from numerical simulations with Silvaco Atlas, we describe how increasing the length of the source electrode can be used to reduce the activation energy of SGT drain current, while maintaining the defining characteristics of SGTs: low saturation voltage, high output impedance in saturation, and tolerance to geometry variations. In this study, we apply the dual current injection modes to obtain drain currents with high and low activation energies and propose mechanisms for their exploitation in future large-area integrated circuit designs.
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14 May 2015
Research Article|
May 13 2015
Temperature dependence of the current in Schottky-barrier source-gated transistors
R. A. Sporea;
R. A. Sporea
Advanced Technology Institute,
University of Surrey
, Guildford, Surrey GU2 7XH, United Kingdom
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M. Overy;
M. Overy
Advanced Technology Institute,
University of Surrey
, Guildford, Surrey GU2 7XH, United Kingdom
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J. M. Shannon;
J. M. Shannon
Advanced Technology Institute,
University of Surrey
, Guildford, Surrey GU2 7XH, United Kingdom
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S. R. P. Silva
S. R. P. Silva
Advanced Technology Institute,
University of Surrey
, Guildford, Surrey GU2 7XH, United Kingdom
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Journal of Applied Physics 117, 184502 (2015)
Article history
Received:
March 17 2015
Accepted:
May 03 2015
Citation
R. A. Sporea, M. Overy, J. M. Shannon, S. R. P. Silva; Temperature dependence of the current in Schottky-barrier source-gated transistors. Journal of Applied Physics 14 May 2015; 117 (18): 184502. https://doi.org/10.1063/1.4921114
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