We performed fully ab initio calculations of carrier mobility in bulk 4H-SiC and at 4H-SiC/SiO2 interface containing some neutral point defects such as silicon and carbon substitutionals, carbon dimers, and oxygen interstitials using Green's functions technique. Obtained values are ∼10–80 cm2/V·s, which is in reasonable agreement with experiment. It is shown that the presence of such defects with concentrations as low as 1%–3% may give significant contribution to mobility degradation. Concentration dependence of mobility comes to saturation at the maximal considered defects concentration of 3%.

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