A dense, homogeneous and crack-free ferroelectric PZT thin film with 〈100〉-preferred orientation was produced using the sol-gel method. The volume fraction α(100) of 〈100〉-oriented grains in the PZT film was calculated [α(100) ≈ 80%] from XRD of the PZT thin film and powder. The PZT thin film exhibits an open polarization vs. electric field loop and a low leakage current density from 10−8 A/cm2 to 10−7 A/cm2. The electrical conduction data were fit to a Schottky-emission model with deep traps from 100 kV/cm to 250 kV/cm. A modified capacitance model was introduced that adds electrical domain capacitance based on a metal-ferroelectric-metal (MFM) system with Schottky contacts. The model reproduces the observed non-linear capacitance vs. voltage behavior of the film.
The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film
K. Liang, A. Buditama, D. Chien, J. Cui, P. L. Cheung, S. Goljahi, S. H. Tolbert, J. P. Chang, C. S. Lynch; The conductivity mechanism and an improved C−V model of ferroelectric PZT thin film. J. Appl. Phys. 7 May 2015; 117 (17): 174107. https://doi.org/10.1063/1.4919431
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