We have synthesized crystals of two-dimensional layered tin disulfide (SnS2) by chemical vapor transport and fabricated field-effect transistors based on mechanically exfoliated SnS2 multilayer platelets. We demonstrate that the threshold voltage of these transistors can be modified by passivating the gate-oxide surface with a self-assembled monolayer of an alkylphosphonic acid, affording transistors with desirable enhancement-mode characteristics. In addition to a positive threshold voltage and a large on/off current ratio, these transistors also have a steep subthreshold swing of 4 V/decade.

1.
C. D. A.
Lokhande
, “
Chemical method for tin disulphide thin film deposition
,”
J. Phys. D: Appl. Phys.
23
,
1703
(
1990
).
2.
K. F.
Mak
,
C.
Lee
,
J.
Hone
,
J.
Shan
, and
T. F.
Heinz
, “
Atomically thin MoS2: A new direct-gap semiconductor
,”
Phys. Rev. Lett.
105
,
136805
(
2010
).
3.
B.
Radisavljevic
,
A.
Radenovic
,
J.
Brivio
,
V.
Giacometti
, and
A.
Kis
, “
Single-layer MoS2 transistors
,”
Nat. Nanotechnol.
6
,
147
(
2011
).
4.
B.
Radisavljevic
and
A.
Kis
,
Nat. Nanotechnol.
8
,
147
(
2013
).
5.
B. W. H.
Baugher
,
H. O. H.
Churchill
,
Y.
Yang
, and
P.
Jarillo-Herrero
, “
Intrinsic electronic transport properties of high-quality monolayer and bilayer MoS2
,”
Nano Lett.
13
,
4212
(
2013
).
6.
D.
De
,
J.
Manongdo
,
S.
See
,
V.
Zhang
,
A.
Guloy
, and
H.
Peng
, “
High on/off ratio field effect transistors based on exfoliated crystalline SnS2 nano-membranes
,”
Nanotechnology
24
,
025202
(
2013
).
7.
H. S.
Song
,
S. L.
Li
,
L.
Gao
,
Y.
Xu
,
K.
Ueno
,
J.
Tang
,
Y. B.
Cheng
, and
K.
Tsukagoshi
, “
High-performance top-gated monolayer SnS2 field-effect transistors and their integrated logic circuits
,”
Nanoscale
5
,
9666
(
2013
).
8.
S.
Kim
,
A.
Konar
,
W.-S.
Hwang
,
J. H.
Lee
,
J.
Lee
,
J.
Yang
,
C.
Jung
,
H.
Kim
,
J.-B.
Yoo
,
J.-Y.
Choi
,
Y. W.
Jin
,
S. Y.
Lee
,
D.
Jena
,
W.
Choi
, and
K.
Kim
, “
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
,”
Nat. Commun.
3
,
1011
(
2012
).
9.
D.
Krasnozhon
,
D.
Lembke
,
C.
Nyffeler
,
Y.
Leblebici
, and
A.
Kis
, “
MoS2 transistors operating at gigahertz frequencies
,”
Nano Lett.
14
,
5905
(
2014
).
10.
B.
Radisavljevic
,
M. B.
Whitwick
, and
A.
Kis
, “
Integrated circuits and logic operations based on single-layer MoS2
,”
ACS Nano
5
,
9934
(
2011
).
11.
L.
Yu
,
Y.-H.
Lee
,
X.
Ling
,
E. J. G.
Santos
,
Y. C.
Shin
,
Y.
Lin
,
M.
Dubey
,
E.
Kaxiras
,
J.
Kong
,
H.
Wang
, and
T.
Palacios
, “
Graphene/MoS2 hybrid technology for large-scale two-dimensional electronics
,”
Nano Lett.
14
,
3055
(
2014
).
12.
X.
Zou
,
J.
Wang
,
C.-H.
Chiu
,
Y.
Wu
,
X.
Xiao
,
C.
Jiang
,
W.-W.
Wu
,
L.
Mai
,
T.
Chen
,
J.
Li
,
J. C.
Ho
, and
L.
Liao
, “
Interface engineering for high-performance top-gated MoS2 field-effect transistors
,”
Adv. Mater.
26
,
6255
(
2014
).
13.
S.
Kobayashi
,
T.
Nishikawa
,
T.
Takenobu
,
S.
Mori
,
T.
Shimoda
,
T.
Mitani
,
H.
Shimotani
,
N.
Yoshimoto
,
S.
Ogawa
, and
Y.
Iwasa
, “
Control of carrier density by self-assembled monolayers in organic field-effect transistors
,”
Nat. Mater.
3
,
317
(
2004
).
14.
S. K.
Possanner
,
K.
Zojer
,
P.
Pacher
,
E.
Zojer
, and
F.
Schürrer
, “
Threshold voltage shifts in organic thin-film transistors due to self-assembled monolayers at the dielectric surface
,”
Adv. Funct. Mater.
19
,
958
(
2009
).
15.
L. A.
Burton
,
D.
Colombara
,
R. D.
Abellon
,
F. C.
Grozema
,
L. M.
Peter
,
T. J.
Savenije
,
G.
Dennler
, and
A.
Walsh
, “
Synthesis, characterization, and electronic structure of single-crystal SnS, Sn2S3, and SnS2
,”
Chem. Mater.
25
,
4908
(
2013
).
16.
K.
Fukuda
,
T.
Hamamoto
,
T.
Yokota
,
T.
Sekitani
,
U.
Zschieschang
,
H.
Klauk
, and
T.
Someya
, “
Effects of the alkyl chain length in phosphonic acid self-assembled monolayer gate dielectrics on the performance and stability of low-voltage organic thin-film transistors
,”
Appl. Phys. Lett.
95
,
203301
(
2009
).
17.
S. P.
Pujari
,
L.
Scheres
,
A. T. M.
Marcelis
, and
H.
Zuilhof
, “
Covalent surface modification of oxide surfaces
,”
Angew. Chem. Int. Ed.
53
,
6322
(
2014
).
18.
U.
Zschieschang
,
F.
Ante
,
M.
Schlörholz
,
M.
Schmidt
,
K.
Kern
, and
H.
Klauk
, “
Mixed self-assembled monolayer gate dielectrics for continuous threshold voltage control in organic transistors and circuits
,”
Adv. Mater.
22
,
4489
(
2010
).
19.
R.
Hofmockel
,
U.
Zschieschang
,
U.
Kraft
,
R.
Rödel
,
N. H.
Hansen
,
M.
Stolte
,
F.
Würthner
,
K.
Takimiya
,
K.
Kern
,
J.
Pflaum
, and
H.
Klauk
, “
High-mobility organic thin-film transistors based on a small-molecule semiconductor deposited in vacuum and by solution shearing
,”
Org. Electron.
14
,
3213
(
2013
).
20.
S.-L.
Li
,
K.
Komatsu
,
S.
Nakaharai
,
Y.-F.
Lin
,
M.
Yamamoto
,
X.
Duan
, and
K.
Tsukagoshi
, “
Thickness scaling effect on interfacial barrier and electrical contact to two-dimensional MoS2 layers
,”
ACS Nano
8
,
12836
(
2014
).
21.
S.-L.
Li
,
K.
Wakabayashi
,
Y.
Xu
,
S.
Nakaharai
,
K.
Komatsu
,
W.-W.
Li
,
Y.-F.
Lin
,
A.
Aparecido-Ferreira
, and
K.
Tsukagoshi
, “
Thickness-dependent interfacial coulomb scattering in atomically thin field-effect transistors
,”
Nano Lett.
13
,
3546
(
2013
).
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