We have synthesized crystals of two-dimensional layered tin disulfide (SnS2) by chemical vapor transport and fabricated field-effect transistors based on mechanically exfoliated SnS2 multilayer platelets. We demonstrate that the threshold voltage of these transistors can be modified by passivating the gate-oxide surface with a self-assembled monolayer of an alkylphosphonic acid, affording transistors with desirable enhancement-mode characteristics. In addition to a positive threshold voltage and a large on/off current ratio, these transistors also have a steep subthreshold swing of 4 V/decade.
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