The real structure and morphology of piezoelectric aluminum nitride (AlN) thin films as essential components of magnetoelectric sensors are investigated via advanced transmission electron microscopy methods. State of the art electron diffraction techniques, including precession electron diffraction and automated crystal orientation mapping (ACOM), indicate a columnar growth of the AlN grains optimized for piezoelectric application with a {0 0 0 1} texture. Comparing ACOM with piezoresponse force microscopy measurements, a visual correlation of the structure and the piezoelectric properties is enabled. With a quantitative analysis of the ACOM measurements, a statistical evaluation of grain rotations is performed, indicating the presence of coincidence site lattices with Σ7, Σ13a, Σ13b, Σ25. Using a geometric phase analysis on high resolution micrographs, the occurrence of strain is detected almost exclusively at the grain boundaries. Moreover, high resolution imaging was applied for solving the atomic structure at stacking mismatch boundaries with a displacement vector of 1/2 ⟨1 0 -1 1⟩. All real structural features can be interpreted via simulations based on crystallographic computing in terms of a supercell approach.
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7 January 2015
Research Article|
January 05 2015
Structural study of growth, orientation and defects characteristics in the functional microelectromechanical system material aluminium nitride Available to Purchase
Viktor Hrkac;
Viktor Hrkac
a)
1Synthesis and Real Structure,
Institute for Materials Science CAU Kiel
, Kaiserstr. 2, 24143 Kiel, Germany
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Aaron Kobler;
Aaron Kobler
2
Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT)
, Hermann-von-Helmholtz Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
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Stephan Marauska;
Stephan Marauska
3
Fraunhofer Institute for Silicon Technology ISIT
, Fraunhoferstr. 1, D-25524 Itzehoe, Germany
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Adrian Petraru;
Adrian Petraru
4Institute of Electrical and Information Engineering, Nanoelectronic,
Christian-Albrechts-University
, Kiel Kaiserstraße 2, D-24143 Kiel, Germany
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Ulrich Schürmann;
Ulrich Schürmann
1Synthesis and Real Structure,
Institute for Materials Science CAU Kiel
, Kaiserstr. 2, 24143 Kiel, Germany
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Venkata Sai Kiran Chakravadhanula
;
Venkata Sai Kiran Chakravadhanula
5
Helmholtz Institute Ulm (HIU) for Electrochemical Energy Storage
, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
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Viola Duppel;
Viola Duppel
6
Max Planck Institute for Solid State Research
, Heisenbergstr. 1, D-70569 Stuttgart, Germany
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Hermann Kohlstedt;
Hermann Kohlstedt
4Institute of Electrical and Information Engineering, Nanoelectronic,
Christian-Albrechts-University
, Kiel Kaiserstraße 2, D-24143 Kiel, Germany
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Bernhard Wagner;
Bernhard Wagner
3
Fraunhofer Institute for Silicon Technology ISIT
, Fraunhoferstr. 1, D-25524 Itzehoe, Germany
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Bettina Valeska Lotsch;
Bettina Valeska Lotsch
7Max Planck Institute for Solid State Research and Department of Chemistry,
Ludwig-Maximilians-University
, Butenandtstr. 5-13, D-81377 Munich, Germany
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Christian Kübel;
Christian Kübel
2
Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT)
, Hermann-von-Helmholtz Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
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Lorenz Kienle
Lorenz Kienle
b)
1Synthesis and Real Structure,
Institute for Materials Science CAU Kiel
, Kaiserstr. 2, 24143 Kiel, Germany
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Viktor Hrkac
1,a)
Aaron Kobler
2
Stephan Marauska
3
Adrian Petraru
4
Ulrich Schürmann
1
Venkata Sai Kiran Chakravadhanula
5
Viola Duppel
6
Hermann Kohlstedt
4
Bernhard Wagner
3
Bettina Valeska Lotsch
7
Christian Kübel
2
Lorenz Kienle
1,b)
1Synthesis and Real Structure,
Institute for Materials Science CAU Kiel
, Kaiserstr. 2, 24143 Kiel, Germany
2
Institute of Nanotechnology (INT) and Karlsruhe Nano Micro Facility (KNMF), Karlsruhe Institute of Technology (KIT)
, Hermann-von-Helmholtz Platz 1, D-76344 Eggenstein-Leopoldshafen, Germany
3
Fraunhofer Institute for Silicon Technology ISIT
, Fraunhoferstr. 1, D-25524 Itzehoe, Germany
4Institute of Electrical and Information Engineering, Nanoelectronic,
Christian-Albrechts-University
, Kiel Kaiserstraße 2, D-24143 Kiel, Germany
5
Helmholtz Institute Ulm (HIU) for Electrochemical Energy Storage
, Albert-Einstein-Allee 11, D-89081 Ulm, Germany
6
Max Planck Institute for Solid State Research
, Heisenbergstr. 1, D-70569 Stuttgart, Germany
7Max Planck Institute for Solid State Research and Department of Chemistry,
Ludwig-Maximilians-University
, Butenandtstr. 5-13, D-81377 Munich, Germany
a)
E-mail: [email protected]
b)
E-mail: [email protected]
J. Appl. Phys. 117, 014301 (2015)
Article history
Received:
September 24 2014
Accepted:
December 16 2014
Citation
Viktor Hrkac, Aaron Kobler, Stephan Marauska, Adrian Petraru, Ulrich Schürmann, Venkata Sai Kiran Chakravadhanula, Viola Duppel, Hermann Kohlstedt, Bernhard Wagner, Bettina Valeska Lotsch, Christian Kübel, Lorenz Kienle; Structural study of growth, orientation and defects characteristics in the functional microelectromechanical system material aluminium nitride. J. Appl. Phys. 7 January 2015; 117 (1): 014301. https://doi.org/10.1063/1.4905109
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