The adaptation of “air-gap” dielectric based field-effect transistor technology to controlling the MgZnO/ZnO heterointerface confined two-dimensional electron system (2DES) is reported. We find it possible to tune the charge density of the 2DES via a gate electrode spatially separated from the heterostructure surface by a distance of 5 μm. Under static gating, the observation of the quantum Hall effect suggests that the charge carrier density remains homogeneous, with the 2DES in the 3 mm square sample the sole conductor. The availability of this technology enables the exploration of the charge carrier density degree of freedom in the pristine sample limit.
References
1.
L.
Pfeiffer
and K.
West
, Physica E
20
, 57
(2003
).2.
H. L.
Stormer
, Rev. Mod. Phys.
71
, 875
(1999
).3.
D. G.
Schlom
and L. N.
Pfeiffer
, Nature Mater.
9
, 881
(2010
).4.
S.
Sze
, Physics of Semiconductor Devices
, 2nd ed. (John Wiley and Sons, Inc.
, New York
, 1981
).5.
P. Y.
Yu
and M.
Cardona
, Fundamentals of Semiconductors
, 4th ed. (Springer
, Berlin
, 2010
).6.
G. D.
Wilk
, R. M.
Wallace
, and J. M.
Anthony
, J. Appl. Phys.
89
, 5243
(2001
).7.
J.
Robertson
, Rep. Prog. Phys.
69
, 327
(2006
).8.
L.
Niinistö
, J.
Nieminen
, M.
Päiväsaari
, J.
Niinistö
, M.
Putkonen
, and M.
Nieminen
, Phys. Status Solidi A
201
, 1443
(2004
).9.
V.
Podzorov
, E.
Menard
, A.
Borissov
, V.
Kiryukhin
, J. A.
Rogers
, and M. E.
Gershenson
, Phys. Rev. Lett.
93
, 086602
(2004
).10.
E.
Menard
, V.
Podzorov
, S.-H.
Hur
, A.
Gaur
, M.
Gershenson
, and J.
Rogers
, Adv. Mater.
16
, 2097
(2004
).11.
Y.
Xia
, V.
Kalihari
, C. D.
Frisbie
, N. K.
Oh
, and J. A.
Rogers
, Appl. Phys. Lett.
90
, 162106
(2007
).12.
M.
Uno
, T.
Uemura
, Y.
Kanaoka
, Z.
Chen
, A.
Facchetti
, and J.
Takeya
, Org. Electron.
14
, 1656
(2013
).13.
K.
Bolotin
, K.
Sikes
, Z.
Jiang
, M.
Klima
, G.
Fudenberg
, J.
Hone
, P.
Kim
, and H.
Stormer
, Solid State Commum.
146
, 351
(2008
).14.
B. E.
Feldman
, B.
Krauss
, J. H.
Smet
, and A.
Yacoby
, Science
337
, 1196
(2012
).15.
D.-K.
Ki
and A. F.
Morpurgo
, Nano Lett.
13
, 5165
(2013
).16.
J.
Falson
, D.
Maryenko
, Y.
Kozuka
, A.
Tsukazaki
, and M.
Kawasaki
, Appl. Phys. Express
4
, 091101
(2011
).17.
Y.
Kozuka
, A.
Tsukazaki
, and M.
Kawasaki
, Appl. Phys. Rev.
1
, 011303
(2014
).18.
W.
Pan
, N.
Masuhara
, N. S.
Sullivan
, K. W.
Baldwin
, K. W.
West
, L. N.
Pfeiffer
, and D. C.
Tsui
, Phys. Rev. Lett.
106
, 206806
(2011
).19.
G.
Gamez
and K.
Muraki
, Phys. Rev. B
88
, 075308
(2013
).20.
A.
Tsukazaki
, S.
Akasaka
, K.
Nakahara
, Y.
Ohno
, H.
Ohno
, D.
Maryenko
, A.
Ohtomo
, and M.
Kawasaki
, Nature Mater.
9
, 889
(2010
).21.
Y.
Kozuka
, A.
Tsukazaki
, D.
Maryenko
, J.
Falson
, S.
Akasaka
, K.
Nakahara
, S.
Nakamura
, S.
Awaji
, K.
Ueno
, and M.
Kawasaki
, Phys. Rev. B
84
, 033304
(2011
).22.
Y.
Dong
, Z.-Q.
Fang
, D. C.
Look
, D. R.
Doutt
, G.
Cantwell
, J.
Zhang
, J. J.
Song
, and L. J.
Brillson
, J. Appl. Phys.
108
, 103718
(2010
).23.
B. J.
Coppa
, R. F.
Davis
, and R. J.
Nemanich
, Appl. Phys. Lett.
82
, 400
(2003
).24.
U.
Özgür
, Y. I.
Alivov
, C.
Liu
, A.
Teke
, M. A.
Reshchikov
, S.
Dorgan
, V.
Avrutin
, S.-J.
Cho
, and H.
Morkoc
, J. Appl. Phys.
98
, 041301
(2005
).25.
M. W.
Allen
and S. M.
Durbin
, Appl. Phys. Lett.
92
, 122110
(2008
).26.
R.
Vetury
, N.-Q.
Zhang
, S.
Keller
, and U. K.
Mishra
, IEEE Trans. Electron Devices
48
, 560
(2001
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
You do not currently have access to this content.