In this article, electrodeposition method is used to demonstrate growth of InSb nanowire (NW) arrays with hierarchical branched structures and complex morphology at room temperature using an all-solution, catalyst-free technique. A gold coated, porous anodic alumina membrane provided the template for the branched NWs. The NWs have a hierarchical branched structure, with three nominal regions: a “trunk” (average diameter of 150 nm), large branches (average diameter of 100 nm), and small branches (average diameter of sub-10 nm to sub-20 nm). The structural properties of the branched NWs were studied using scanning transmission electron microscopy, transmission electron microscopy, scanning electron microscopy, x-ray diffraction, energy dispersive x-ray spectroscopy, and Raman spectroscopy. In the as-grown state, the small branches of InSb NWs were crystalline, but the trunk regions were mostly nanocrystalline with an amorphous boundary. Post-annealing of NWs at 420 °C in argon produced single crystalline structures along ⟨311⟩ directions for the branches and along ⟨111⟩ for the trunks. Based on the high crystallinity and tailored structure in this branched NW array, the effective refractive index allows us to achieve excellent antireflection properties signifying its technological usefulness for photon management and energy harvesting.
Skip Nav Destination
Article navigation
28 August 2014
Research Article|
August 25 2014
Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties
Suprem R. Das;
Suprem R. Das
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Cem Akatay;
Cem Akatay
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
3School of Materials Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Asaduzzaman Mohammad;
Asaduzzaman Mohammad
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Mohammad Ryyan Khan;
Mohammad Ryyan Khan
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Kosuke Maeda;
Kosuke Maeda
4Department of Materials Science and Engineering,
Tokyo Institute of Technology
, 4259 Nagatsuta–cho, Midori-ku, Yokohama 226-8502, Japan
5
Advanced Device Laboratory
, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Search for other works by this author on:
Russell S. Deacon;
Russell S. Deacon
5
Advanced Device Laboratory
, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
6
RIKEN Center for Emergent Matter Science (CEMS)
, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Search for other works by this author on:
Koji Ishibashi;
Koji Ishibashi
5
Advanced Device Laboratory
, RIKEN, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
6
RIKEN Center for Emergent Matter Science (CEMS)
, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
Search for other works by this author on:
Yong P. Chen;
Yong P. Chen
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
7Department of Physics and Astronomy,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Timothy D. Sands;
Timothy D. Sands
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
3School of Materials Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
Muhammad A. Alam;
Muhammad A. Alam
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
David B. Janes
David B. Janes
a)
1School of Electrical and Computer Engineering,
Purdue University
, West Lafayette, Indiana 47907, USA
2Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]
J. Appl. Phys. 116, 083506 (2014)
Article history
Received:
May 10 2014
Accepted:
July 21 2014
Citation
Suprem R. Das, Cem Akatay, Asaduzzaman Mohammad, Mohammad Ryyan Khan, Kosuke Maeda, Russell S. Deacon, Koji Ishibashi, Yong P. Chen, Timothy D. Sands, Muhammad A. Alam, David B. Janes; Electrodeposition of InSb branched nanowires: Controlled growth with structurally tailored properties. J. Appl. Phys. 28 August 2014; 116 (8): 083506. https://doi.org/10.1063/1.4893704
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Scaling effects on the microstructure and thermomechanical response of through silicon vias (TSVs)
Shuhang Lyu, Thomas Beechem, et al.
Related Content
Nanoporosity-induced superhydrophobicity and large antireflection in InSb
Appl. Phys. Lett. (May 2016)
Size effects in vapor-solid-solid Ge nanowire growth with a Ni-based catalyst
J. Appl. Phys. (September 2012)
Structural stability and electronic properties of InSb nanowires: A first-principles study
J. Appl. Phys. (March 2015)