Te-free phase-change material Al-Sb-Se is investigated and considered to be a promising candidate of storage medium for phase change memory (PCM) application. Al0.49Sb2.19Se exhibits a higher crystallization temperature (∼222.7 °C), a larger crystallization activation energy (∼4.17 eV), and a better data retention (∼146.5 °C for 10 yr) in comparison with those of Ge2Sb2Te5. The uniformity of material distribution for crystalline film improves the reliability of phase change memory. Al0.49Sb2.19Se-based memory cell significantly shows lower power consumption for SET/RESET reversible switching than that of Ge2Sb2Te5-based one. Furthermore, PCM based on Al0.49Sb2.19Se shows endurance up to 3.5 × 103 cycles with stability resistance of about two orders of magnitude on/off ratio.

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