Voltage and frequency dependent capacitance measurements were performed on epitaxial BaTiO3 and Pb(Zr0.2Ti0.8)O3 thin films deposited on single crystal SrTiO3 substrates with (001) and (111) orientations. The measured capacitors have common bottom SrRuO3 contact and different metals as top electrodes: SrRuO3, Pt, Cu, Al, and Au. The capacitance-voltage characteristics were used to extract information regarding the density of the free carriers and the linear contribution to the static dielectric constant. The frequency dependent impedance was used to develop a suitable equivalent circuit for the epitaxial ferroelectric capacitors. It was found that the frequency dependence of the imaginary part of the impedance can be well simulated, in all cases, using a circuit composed of Schottky-type capacitance related to electrode interfaces, contact resistance, and the R-C parallel connection related to the ferroelectric volume of the film. Values for the components of the equivalent circuit were obtained by fitting the experimental data with the simulated curves. These were then used to extract quantities such as dielectric constant in the ferroelectric volume, the width of the depletion layers, and the apparent built-in potential. It was found that, although the investigated capacitors are of different ferroelectric materials, grown on substrates with different orientations, and having different metals as top electrodes, the values for the capacitance associated with the Schottky contacts and the apparent built-in potential are not very different. The results suggest a strong influence of ferroelectric polarization on the electrode interface properties in the case of epitaxial ferroelectric films.
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28 July 2014
Research Article|
July 30 2014
General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films
L. Pintilie;
L. Pintilie
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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L. Hrib;
L. Hrib
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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I. Pasuk;
I. Pasuk
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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C. Ghica;
C. Ghica
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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A. Iuga;
A. Iuga
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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I. Pintilie
I. Pintilie
National Institute of Materials Physics
, Atomistilor 105 bis, Magurele 077125, Romania
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J. Appl. Phys. 116, 044108 (2014)
Article history
Received:
May 27 2014
Accepted:
July 14 2014
Citation
L. Pintilie, L. Hrib, I. Pasuk, C. Ghica, A. Iuga, I. Pintilie; General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films. J. Appl. Phys. 28 July 2014; 116 (4): 044108. https://doi.org/10.1063/1.4891255
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