The GaAs-like longitudinal optical phonon frequency in two hydrogenated GaAs1-xNx/GaAs1-xNx:H microwire heterostructures—with similar N concentration, but different H dose and implantation conditions—has been investigated by micro-Raman mapping. In the case of GaAs0.991N0.009 wires embedded in barriers where GaAs-like properties are recovered through H irradiation, the phonon frequency in the barriers undergoes a blue shift with respect to the wires. In GaAs0.992N0.008 wires embedded in less hydrogenated barriers, the phonon frequency exhibits an opposite behavior (red shift). Strain, disorder, phonon localization effects induced by H-irradiation on the GaAs-like phonon frequency are discussed and related to different types of N-H complexes formed in the hydrogenated barriers. It is shown that the red (blue) character of the frequency shift is related to the dominant N-2H (N-3H) type of complexes. Moreover, for specific experimental conditions, an all-optical determination of the uniaxial strain field is obtained. This may improve the design of recently presented devices that exploit the correlation between uniaxial stress and the degree of polarization of photoluminescence.
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28 December 2014
Research Article|
December 29 2014
H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures
E. Giulotto;
E. Giulotto
a)
1Dipartimento di Fisica,
Università degli studi di Pavia
, Via Bassi 6, I-27100 Pavia, Italy
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M. Geddo
;
M. Geddo
1Dipartimento di Fisica,
Università degli studi di Pavia
, Via Bassi 6, I-27100 Pavia, Italy
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M. Patrini
;
M. Patrini
1Dipartimento di Fisica,
Università degli studi di Pavia
, Via Bassi 6, I-27100 Pavia, Italy
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G. Guizzetti
;
G. Guizzetti
1Dipartimento di Fisica,
Università degli studi di Pavia
, Via Bassi 6, I-27100 Pavia, Italy
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M. Felici;
M. Felici
2Dipartimento di Fisica,
Sapienza Università di Roma
, Piazzale A. Moro 2, I-00185 Roma, Italy
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M. Capizzi;
M. Capizzi
2Dipartimento di Fisica,
Sapienza Università di Roma
, Piazzale A. Moro 2, I-00185 Roma, Italy
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A. Polimeni;
A. Polimeni
2Dipartimento di Fisica,
Sapienza Università di Roma
, Piazzale A. Moro 2, I-00185 Roma, Italy
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F. Martelli;
F. Martelli
3
Laboratorio Nazionale TASC-IOM-CNR
, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste, Italy
4
Istituto per la Microelettronica e i Microsistemi
, CNR, Via del fosso del cavaliere 100, 00133 Roma, Italy
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S. Rubini
S. Rubini
3
Laboratorio Nazionale TASC-IOM-CNR
, Area Science Park, S.S. 14, Km. 163.5, 34149 Trieste, Italy
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 116, 245304 (2014)
Article history
Received:
October 02 2014
Accepted:
December 15 2014
Citation
E. Giulotto, M. Geddo, M. Patrini, G. Guizzetti, M. Felici, M. Capizzi, A. Polimeni, F. Martelli, S. Rubini; H irradiation effects on the GaAs-like Raman modes in GaAs1-xNx/GaAs1-xNx:H planar heterostructures. J. Appl. Phys. 28 December 2014; 116 (24): 245304. https://doi.org/10.1063/1.4905097
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