Structural and magnetotransport properties of epitaxial La0.67Ca0.33MnO3(30 nm)/NdGaO3(001) [LCMO/NGO(001)] films are tuned by inserting an insulating SmFeO3 (SFO) buffer layer at various thicknesses (t). All the layers and the NGO substrates have the same Pbnm symmetry with the octahedra tilting about the b-axis, but different orthorhombicity (d). We found that as t increases, the fully strained (≤15 nm) or partially relaxed (30–60 nm) SFO layers can produce different d in the upper LCMO films. Correspondingly, the induced antiferromagnetic-insulating (AFI) state in LCMO is greatly enhanced with TAFI shifted from ∼250 K for t ≤ 15 nm to ∼263 K for t = 30–60 nm. We also show that the strain relaxation for t ≥ 30 nm is remarkably anisotropic, with a stable lattice constant a as that of the NGO substrates but increasing b of both SFO and LCMO layers. This indicates the octahedral coupling across the interfaces, leaving the strain along the a-axis accommodated by the octahedral tilts, while along the b-axis most probably by the octahedral deformations. The AFI state in the LCMO layer could be ascribed to the enhanced orthorhombicity with cooperatively increased Jahn-Teller-like distortions and tilting of the MnO6 octahedra. The results strongly suggest that the interfacial octahedral coupling plays a crucial role in epitaxial growth and in tuning functionalities of the perovskite oxide films.
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28 November 2014
Research Article|
November 26 2014
Enhancing the orthorhombicity and antiferromagnetic-insulating state in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films by inserting a SmFeO3 buffer layer
Xuelian Tan;
Xuelian Tan
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Guanyin Gao;
Guanyin Gao
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Pingfan Chen;
Pingfan Chen
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Haoran Xu;
Haoran Xu
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Bowen Zhi;
Bowen Zhi
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Feng Jin;
Feng Jin
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
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Feng Chen;
Feng Chen
2
High Magnetic Field Laboratory
, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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Wenbin Wu
Wenbin Wu
a)
1Hefei National Laboratory for Physical Sciences at Microscale,
University of Science and Technology of China
, Hefei 230026, People's Republic of China
2
High Magnetic Field Laboratory
, Chinese Academy of Sciences, Hefei 230031, People's Republic of China
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a)
Electronic mail: wuwb@ustc.edu.cn
J. Appl. Phys. 116, 203706 (2014)
Article history
Received:
July 21 2014
Accepted:
November 18 2014
Citation
Xuelian Tan, Guanyin Gao, Pingfan Chen, Haoran Xu, Bowen Zhi, Feng Jin, Feng Chen, Wenbin Wu; Enhancing the orthorhombicity and antiferromagnetic-insulating state in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films by inserting a SmFeO3 buffer layer. J. Appl. Phys. 28 November 2014; 116 (20): 203706. https://doi.org/10.1063/1.4902951
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