Epitaxial films of the ternary topological insulator Bi2Te2Se were grown on Si(111) substrates and investigated for their surface electronic properties and morphology. We employ a Se-capping procedure allowing for the preparation of clean films in the surface-analysis experimental setups. Using angle-resolved photoelectron spectroscopy, we determine the dispersion of the topological surface state. With time after surface preparation, the spectroscopic features in the surface electronic structure exhibit significant temperature-dependent shifts to higher binding energies. Scanning tunneling microscopy images show terraces with typical step edge separations of 50 nm–150 nm. X-ray photoelectron spectroscopy indicates an increased Se concentration at the surface.
Electronic structure and morphology of epitaxial Bi2Te2Se topological insulator films
H. Maaß, S. Schreyeck, S. Schatz, S. Fiedler, C. Seibel, P. Lutz, G. Karczewski, H. Bentmann, C. Gould, K. Brunner, L. W. Molenkamp, F. Reinert; Electronic structure and morphology of epitaxial Bi2Te2Se topological insulator films. J. Appl. Phys. 21 November 2014; 116 (19): 193708. https://doi.org/10.1063/1.4902010
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