In this work, the characteristics of vertical tunneling field-effect transistors based on graphene (VTGFET) and graphene nanoribbon heterostructure (VTGNRFET) in the presence of disorder are theoretically investigated. An statistical analysis based on an atomistic tight-binding model for the electronic bandstructure along with the non-equilibrium Green's function formalism are employed. We study the dependence of the averaged density of states, transmission probability, on- and off-state conductances, on/off conductance ratio, and transfer characteristics on the substrate induced potential fluctuations and vacancies. In addition, the variabilities of the device characteristics due to the presence of disorder are evaluated. It can be inferred from the results that while introducing vacancies cause a relatively modest suppression of the transmission probability, potential fluctuations lead to the significant increase of transmission probability and conductance of the device. Moreover, the results show that the transport properties of VTGFET are more robust against disorder compared to VTGNRFET.
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14 November 2014
Research Article|
November 13 2014
On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors
Nayereh Ghobadi;
Nayereh Ghobadi
1School of Electrical and Computer Engineering,
University of Tehran
, P.O. Box 14395-515, Tehran, Iran
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Mahdi Pourfath
Mahdi Pourfath
a)
1School of Electrical and Computer Engineering,
University of Tehran
, P.O. Box 14395-515, Tehran, Iran
2
Institute for Microelectronics
, TU Wien, Gusshausstrasse 27–29/E360, 1040 Vienna, Austria
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a)
Electronic mails: [email protected], [email protected]
J. Appl. Phys. 116, 184506 (2014)
Article history
Received:
September 06 2014
Accepted:
November 01 2014
Citation
Nayereh Ghobadi, Mahdi Pourfath; On the role of disorder on graphene and graphene nanoribbon-based vertical tunneling transistors. J. Appl. Phys. 14 November 2014; 116 (18): 184506. https://doi.org/10.1063/1.4901584
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