A compact quantum correction model for symmetric double gate metal-oxide-semiconductor field-effect transistor

A compact quantum correction model for a symmetric double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is investigated. The compact quantum correction model is proposed from the concepts of the threshold voltage shift (ΔV_TH^QM) and the gate capacitance (C_g) degradation. First of all, ΔV_TH^QM induced by quantum mechanical (QM) effects is modeled. The C_g degradation is then modeled by introducing the inversion layer centroid. With ΔV_TH^QM and the C_g degradation, the QM effects are implemented in previously reported classical model and a comparison between the proposed quantum correction model and numerical simulation results is presented. Based on the results, the proposed quantum correction model can be applicable to the compact model of DG MOSFET.