We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance of ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.
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21 September 2014
Research Article|
September 18 2014
Controllable spin-charge transport in strained graphene nanoribbon devices Available to Purchase
Ginetom S. Diniz;
Ginetom S. Diniz
a)
1Institute of Physics,
University of Brasília
, 70919-970, Brasília-DF, Brazil
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Marcos R. Guassi;
Marcos R. Guassi
1Institute of Physics,
University of Brasília
, 70919-970, Brasília-DF, Brazil
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Fanyao Qu
Fanyao Qu
1Institute of Physics,
University of Brasília
, 70919-970, Brasília-DF, Brazil
2Department of Physics,
The University of Texas at Austin
, Austin, Texas 78712, USA
Search for other works by this author on:
Ginetom S. Diniz
1,a)
Marcos R. Guassi
1
Fanyao Qu
1,2
1Institute of Physics,
University of Brasília
, 70919-970, Brasília-DF, Brazil
2Department of Physics,
The University of Texas at Austin
, Austin, Texas 78712, USA
a)
Electronic mail: [email protected]
J. Appl. Phys. 116, 113705 (2014)
Article history
Received:
May 13 2014
Accepted:
September 10 2014
Citation
Ginetom S. Diniz, Marcos R. Guassi, Fanyao Qu; Controllable spin-charge transport in strained graphene nanoribbon devices. J. Appl. Phys. 21 September 2014; 116 (11): 113705. https://doi.org/10.1063/1.4896251
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