We have deposited NdNi1−xMnxO3 (0 ≤ x ≤ 0.10) thin films on SrTiO3 (001), NdGaO3 (001), and YAlO3 (100) substrates and studied the effects of Mn-doping and strain on the charge transport. The majority of charge carriers are holes. Both the in-plane strain and the Mn-doping affect the electrical transport of the films. The metallic state completely vanishes at Mn-doping of x = 0.10. All the films, including x = 0, deposited on SrTiO3 are insulating throughout the temperature range. We find that the resistivity data of all the insulating films fit to two different models, i.e., variable range hopping and Arrhenius equation, in two different temperature regions. The mechanism of charge-transport in the insulating films changes from one type to another and the temperature range of fittings depend on the level of Mn-doping. The results and analyses clearly show that there are contrasting effects of Mn-doping in the metallic and the insulating regions: on one hand, the resistivity increases with increasing Mn-doping in the metallic region; and on the other hand, the hopping/activation of charge carriers get promoted in the insulating region.

1.
A. V.
Boris
,
Y.
Matiks
,
E.
Benckiser
,
A.
Frano
,
P.
Popovich
,
V.
Hinkov
,
P.
Wochner
,
M.
Castro-Colin
,
E.
Detemple
,
V. K.
Malik
,
C.
Bernhard
,
T.
Prokscha
,
A.
Suter
,
Z.
Salman
,
E.
Morenzoni
,
G.
Cristiani
,
H.-U.
Habermeier
, and
B.
Keimer
,
Science
332
,
937
(
2011
).
2.
J.
Chaloupka
and
G.
Khaliullin
,
Phys. Rev. Lett.
100
,
016404
(
2008
).
3.
G.
Giovannetti
,
S.
Kumar
,
D.
Khomskii
,
S.
Picozzi
, and
J.
Ven den Brink
,
Phys. Rev. Lett.
103
,
156401
(
2009
).
4.
I. I.
Mazin
,
D. I.
Khomskii
,
R.
Lengsdorf
,
J. A.
Alonso
,
W. G.
Marshall
,
R. M.
Ibberson
,
A.
Podlesnyak
,
M. U.
Martínez-Lope
, and
M. M.
Abd-Elmeguid
,
Phys. Rev. Lett.
98
,
176406
(
2007
).
5.
M. L.
Medarde
,
J. Phys.: Condens. Matter
9
,
1679
1707
(
1997
).
6.
G.
Catalan
,
Phase Trans.
81
,
729
749
(
2008
).
7.
P.-H.
Xiang
,
S.
Asanuma
,
H.
Yamada
,
I. H.
Inoue
,
H.
Akoh
, and
A.
Sawa
,
Appl. Phys. Lett.
97
,
032114
(
2010
).
8.
J.
Liu
,
M.
Kareev
,
B.
Gray
,
J. W.
Kim
,
P.
Ryan
,
B.
Dabrowski
,
J. W.
Freeland
, and
J.
Chakhalian
,
Appl. Phys. Lett.
96
,
233110
(
2010
).
9.
A.
Kumar
,
P.
Singh
,
D.
Kaur
,
J.
Jesudasan
, and
P.
Raychaudhuri
,
J. Phys. D: Appl. Phys.
39
,
5310
5315
(
2006
).
10.
J. B.
Torrance
,
P.
Lacorre
,
A. I.
Nazzal
,
E. J.
Ansaldo
, and
Ch.
Niedermayer
,
Phys. Rev. B
45
,
8209
(
1992
).
11.
L.
García-Muñoz
,
R.
Carvajal
,
P.
Lacorre
, and
J. B.
Torrance
,
Phys. Rev. B
46
,
4414
(
1992
).
12.
M. A.
Novojilov
,
O. Yu.
Gorbenko
,
I. E.
Graboy
,
A. R.
Kaul
,
H. W.
Zandbergen
,
N. A.
Babushkina
, and
L. M.
Belova
,
Appl. Phys. Lett.
76
,
2041
(
2000
).
13.
F.
Conchon
,
A.
Boulle
,
R.
Guinebretière
,
C.
Girardot
,
S.
Pignard
,
J.
Kreisel
,
F.
Weiss
,
E.
Dooryhée
, and
J.-L.
Hodeau
,
Appl. Phys. Lett.
91
,
192110
(
2007
).
14.
D.
Kumar
,
K. P.
Rajeev
,
A. K.
Kushwaha
, and
R. C.
Budhani
,
J. Appl. Phys.
108
,
063503
(
2010
).
15.
X.
Obradors
,
L. M.
Paulius
,
M. B.
Maple
,
J. B.
Torrance
,
A. I.
Nazzal
,
J.
Fontcuberta
, and
X.
Granados
,
Phys. Rev. B
47
(
12
),
12353
(
1993
).
16.
J.-G.
Cheng
,
J.-S.
Zhou
,
J. B.
Goodenough
,
J. A.
Alonso
, and
M. J.
Martinez-Lope
,
Phys. Rev. B
82
,
085107
(
2010
).
17.
I.
Chaitanya Lekshmi
,
A.
Gayen
, and
M. S.
Hegde
,
J. Phys.: Condens. Matter
17
,
6445
6458
(
2005
).
18.
R.
Malliky
,
E. V.
Sampathkumaran
,
J. A.
Alonsoz
, and
M. J.
Martinez-Lopez
,
J. Phys.: Condens. Matter
10
,
3969
(
1998
).
19.
M.
Gibert
,
P.
Zubko
,
R.
Scherwitz
,
J.
Íñiguez
, and
J.-M.
Triscone
,
Nature Mater.
11
,
195
(
2012
).
20.
M.
Chandra
,
R.
Rana
,
F.
Aziz
,
A.
Khare
,
D. S.
Rana
, and
K. R.
Mavani
,
J. Phys. D: Appl. Phys.
46
,
415305
(
2013
).
21.
D.
Kumar
,
K. P.
Rajeev
,
J. A.
Alonso
, and
M. J.
Martinez-Lope
,
J. Phys.: Condens. Matter
21
,
185402
(
2009
).
22.
X.
Granados
,
J.
Fontcuberta
,
X.
Obradors
,
L. I.
Mañosa
, and
J. B.
Torrance
,
Phys. Rev. B
48
,
11666
11672
(
1993
).
23.
X.
Granados
,
J.
Fontcuberta
,
X.
Obradors
, and
J. B.
Torrance
,
Phys. Rev. B
46
,
15683
15688
(
1992
).
24.
G.
Catalan
,
R. M.
Bowman
, and
J. M.
Gregg
,
Phys. Rev. B
62
,
7892
7900
(
2000
).
25.
K. R.
Mavani
and
P. L.
Paulose
,
Appl. Phys. Lett.
86
,
162504
(
2005
).
26.
K. R.
Mavani
and
P. L.
Paulose
,
Euro Phys. Lett.
78
,
37004
(
2007
).
27.
I. V.
Nikulina
,
M. A.
Novojilova
,
A. R.
Kaulb
,
S. N.
Mudretsovab
, and
S. V.
Kondrashovb
,
Mater. Res. Bull.
39
,
775
791
(
2004
).
28.
S. D.
Ha
,
R.
Jaramillo
,
D. M.
Silevitch
,
F.
Schoofs
,
K.
Kerman
,
J. D.
Baniecki
, and
S.
Ramanathan
,
Phys. Rev. B
87
,
125150
(
2013
).
29.
R.
Scherwitzl
,
P.
Zubko
,
I.
Gutierrez Lezama
,
S.
Ono
,
A. F.
Morpurgo
,
G.
Catalan
, and
J.-M.
Triscone
,
Adv. Matter
22
,
5517
5520
(
2010
).
30.
J.
Son
,
B.
Jalan
,
A. P.
Kajdos
,
L.
Balents
,
S. J.
Allen
, and
S.
Stemmer
,
Appl. Phys. Lett.
99
,
192107
(
2011
).
31.
N. F.
Mott
,
Metal-Insulator Transitions
, 2nd ed. (
Taylor and Francis
,
London
,
1990
).
32.
S. D.
Ha
,
G. H.
Aydogdu
, and
S.
Ramanathan
,
J. Appl. Phys.
110
,
094102
(
2011
).
33.
S. D.
Ha
,
U.
Vetter
,
J.
Shi
, and
S.
Ramanathan
,
Appl. Phys. Lett.
102
,
183102
(
2013
).
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