The single particle tunneling in a vertical stack consisting of monolayers of two-dimensional semiconductors is studied theoretically, and its application to a novel Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor (Thin-TFET) is proposed and described. The tunneling current is calculated by using a formalism based on the Bardeen's transfer Hamiltonian, and including a semi-classical treatment of scattering and energy broadening effects. The misalignment between the two 2D materials is also studied and found to influence the magnitude of the tunneling current but have a modest impact on its gate voltage dependence. Our simulation results suggest that the Thin-TFETs can achieve very steep subthreshold swing, whose lower limit is ultimately set by the band tails in the energy gaps of the 2D materials produced by energy broadening. The Thin-TFET is thus very promising as a low voltage, low energy solid state electronic switch.
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21 February 2014
Research Article|
February 21 2014
Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor
Mingda (Oscar) Li;
Mingda (Oscar) Li
a)
1
University of Notre Dame
, Notre Dame,
Indiana 46556, USA
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David Esseni;
David Esseni
2
University of Udine,
Udine, Italy
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Gregory Snider;
Gregory Snider
1
University of Notre Dame
, Notre Dame,
Indiana 46556, USA
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Debdeep Jena;
Debdeep Jena
1
University of Notre Dame
, Notre Dame,
Indiana 46556, USA
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Huili Grace Xing
Huili Grace Xing
b)
1
University of Notre Dame
, Notre Dame,
Indiana 46556, USA
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a)
E-mail: [email protected]
b)
E-mail: [email protected]
J. Appl. Phys. 115, 074508 (2014)
Article history
Received:
December 09 2013
Accepted:
February 06 2014
Citation
Mingda (Oscar) Li, David Esseni, Gregory Snider, Debdeep Jena, Huili Grace Xing; Single particle transport in two-dimensional heterojunction interlayer tunneling field effect transistor. J. Appl. Phys. 21 February 2014; 115 (7): 074508. https://doi.org/10.1063/1.4866076
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