We explore the radiation induced effects in thin films from the Ge-Se to Ge-Te systems accompanied with silver radiation induced diffusion within these films, emphasizing two distinctive compositional representatives from both systems containing a high concentration of chalcogen or high concentration of Ge. The studies are conducted on blanket chalcogenide films or on device structures containing also a silver source. Data about the electrical conductivity as a function of the radiation dose were collected and discussed based on material characterization analysis. Raman Spectroscopy, X-ray Diffraction Spectroscopy, and Energy Dispersive X-ray Spectroscopy provided us with data about the structure, structural changes occurring as a result of radiation, molecular formations after Ag diffusion into the chalcogenide films, Ag lateral diffusion as a function of radiation and the level of oxidation of the studied films. Analysis of the electrical testing suggests application possibilities of the studied devices for radiation sensing for various conditions.
REFERENCES
1.
M.
Mitkova
, “Three-component chalcogenide glasses as inorganic photoresists
,” Thin Solid Films
182
, 247
–254
(1989
).2.
S.
Ovshinsky
, “Optically induced phase changes in amorphous materials
,” J. Non-Cryst. Solids
141
, 200
–203
(1992
).3.
J.
Sanghera
and I.
Aggarwal
, “Active and passive chalcogenide glass optical fibers for IR applications: A review
,” J. Non-Cryst. Solids
256
, 6
–16
(1999
).4.
O. I.
Shpotyuk
, R.
Fairman
, and B.
Ushkov
, “Properties of chalcogenide glasses
,” Semiconducting Chalcogenide Glass
(Elsevier Academic Press
, 2004
), pp. 215
–255
.5.
M. Z.
Kabir
, S.
Kasap
, W.
Zhao
, and J.
Rowlands
, “Direct conversion x-ray sensors: Sensitivity, DQE, and MTF
,” IEEE Proc.: Circuits Devices Syst.
150
(4
), 258
–266
(2003
).6.
K. S.
Karim
, A.
Nathan
, and J. A.
Rowlands
, “Amorphous silicon active pixel sensor readout circuit for digital imaging
,” IEEE Trans. Electron Devices
50
, 200
–208
(2003
).7.
M.
Shpotyuk
, O.
Shpotyuk
, R.
Golovchak
, and P.
Demchenko
, “FSDP-related correlations in γ-irradiated chalcogenide semiconductor glasses: The case of glassy arsenic trisulphide g-As2S3 revised
,” J. Phys. Chem. Solids
74
, 1721
–1725
2013
.8.
M. A.
Al-Ewaisi
, M. M. A.
Imran
, O. A.
Lafi
, and M. d. W.
Kloub
, “Effect of gamma irradiation on some electrical properties and optical band gap of bulk Se92Sn8 chalcogenide glass
,” Physica B
405
, 2643
–2647
(2010
).9.
S. N.
Al-Bati
, O. A.
Lafi
, M.
Imran
, and M. d. M.
Shaderma
, “Electrical studies on bulk Se96 Sn4 semiconducting glass before and after gamma irradiation
,” J. Phys. Chem. Solids
71
, 1534
–1539
(2010
).10.
T.
Minami
, A.
Yoshida
, and M.
Tanaka
, “Gamma-ray induced conductivity of vitreous semiconductors in the systems As-S-Te and As-Se-Te
,” J. Non-Cryst. Solids
7
, 328
–336
(1972
).11.
F.
Xia
, S.
Baccaro
, H.
Wang
, W.
Hua
, H.
Zeng
, X.
Zhang
, and G.
Chen
, “γ-ray irradiation induced multiple effects on Ge–As–Se chalcogenide glasses
,” J. Non-Cryst. Solids
354
, 1365
–1368
(2008
).12.
M.
Mitkova
and M.
Kozicki
, “Ag-photodoping in Ge-chalcogenide amorphous thin films—Reaction products and their characterization
,” J. Phys. Chem. Solids
68
, 866
–872
(2007
).13.
M.
Mitkova
and D. P.
Butt
, “Chalcogenide glass ionizing radiation sensor
,” U.S. patent 20,130,082,185 (2013
).14.
G. C.
Messenger
and M. S.
Ash
, The Effects of Radiation on Electronic Systems
(Van Nostrand Reihnold
, New York
, 1986
).15.
A.
Holmes-Siedle
and L.
Adams
, “RADFET: A review of the use of metal-oxide-silicon devices as integrating dosimeters
,” Radiat. Phys. Chem.
28
, 235
–244
(1986
).16.
M.
Ailavajhala
, M.
Mitkova
, and D. P.
Butt
, “Simulation and process flow of radiation sensors based on chalcogenide glasses for in situ measurement capability
,” Phys. Status Solidi C
9
, 2415
–2419
(2012
).17.
M.
Mitkova
, Y.
Sakaguchi
, D.
Tenne
, S. K.
Bhagat
, and T. L.
Alford
, “Structural details of Ge-rich and silver-doped chalcogenide glasses for nano-ionic nonvolatile memory
,” Phys. Status Solidi A
207
, 621
(2010
).18.
Y.
Gonzalez-Velo
, H.
Barnaby
, A.
Chandran
, D.
Oleksy
, P.
Dandamudi
, M.
Kozicki
, K.
Holbert
, M.
Mitkova
, M.
Ailavajhala
, and P.
Chen
, “Effects of cobalt-60 gamma-rays on Ge-Se chalcogenide glasses and Ag/Ge-Se test structures
,” IEEE Trans. Nucl. Sci.
59
, 3093
–3100
(2012
).19.
K.
Tanaka
, “Configurational and structural models for photodarkening in glassy chalcogenides
,” Jpn. J. Appl. Phys., Part 1
25
, 779
–786
(1986
).20.
M. A.
Ureña
, M.
Fontana
, B.
Arcondo
, and M. T.
Clavaguera-Mora
, “Crystallization processes of Ag–Ge–Se superionic glasses
,” J. Non-Cryst. Solids
320
, 151
–167
(2003
).21.
M.
Kawasaki
, J.
Kawamura
, Y.
Nakamura
, and M.
Aniya
, “Ionic conductivity of Agx(GeSe3)1−x (0 ≤ x ≤ 0.571) glasses
,” Solid State Ionics
123
, 259
–269
(1999
).22.
M.
Mitkova
, Y.
Wang
, and P.
Boolchand
, “The dual chemical role of silver as dopant in the Ge–Se–Ag ternary
,” Phys. Rev. Lett.
83
, 3848
–3851
(1999
).23.
K.
Shahi
, “Transport studies on superionic conductors
,” Phys. Status Solidi A
41
, 11
–44
(1977
).24.
D.
Zhao
, H.
Wang
, G.
Chen
, S.
Baccaro
, A.
Cecilia
, M.
Falconieri
, and L.
Pilloni
, “Gamma-ray-induced multi-effect on properties of chalcogenide glasses
,” J. Am. Ceram. Soc.
89
, 3582
–3584
(2006
).25.
W.
Shen
, J.
Ren
, G.
Chen
, S.
Baccaro
, A.
Cemmi
, I. D.
Sarcina
, M.
Falconieri
, and F.
Menchini
, “Controllable gamma-ray sensitivity of Ag-doped and/or AgI-modified Ge–Ga–S glasses
,” Nucl. Instrum. Methods Phys. Res. B
280
, 36
–38
(2012
).26.
P.
Khan
, A.
Barik
, E.
Vinod
, K.
Sangunni
, H.
Jain
, and K.
Adarsh
, “Coexistence of fast photodarkening and slow photobleaching in Ge19As21Se60 thin films
,” Opt. Express
20
, 12416
–12421
(2012
).27.
P.
Jóvári
, A.
Piarristeguy
, R.
Escalier
, I.
Kaban
, J.
Bednarčik
, and A.
Pradel
, “Short range order and stability of amorphous GexTe100−x alloys (12 ≤ x ≤ 44.6)
,” J. Phys.: Condens. Matter
25
, 195401
(2013
).28.
K.
Chopra
, S.
Barthwal
, and D.
Pandya
, “Structural sensitivity of transport and optical properties of amorphous GeTe
,” Phys. Status Solidi A
35
, 761
–768
(1976
).29.
V.
Lyubin
, M.
Klebanov
, A.
Bruner
, N.
Shitrit
, and B.
Sfez
, “Transient photodarkening and photobleaching in glassy GeSe2 films
,” Opt. Mater.
33
, 949
–952
(2011
).30.
P.
Khurana
, A.
Vohra
, and K.
Srivastava
, “Silver-doping effects on electrical properties of Ge-Te alloy
,” J. Mater. Sci.: Mater. Electron.
1
, 175
–181
(1990
).31.
R.
Mazzarello
, S.
Caravati
, S.
Angioletti-Uberti
, M.
Bernasconi
, and M.
Parrinello
, “Signature of tetrahedral Ge in the Raman spectrum of amorphous phase-change materials
,” Phys. Rev. Lett.
104
, 085503
(2010
).32.
A. V.
Kolobov
, P.
Fons
, and J.
Tominaga
, “p-type conductivity of GeTe: The role of lone-pair electrons
,” Phys. Status Solidi B
249
, 1902
–1906
(2012
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
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