Capacitance-voltage (C-V) and Deep-Level-Transient Spectroscopy (DLTS) measurements were performed on Metal-Oxide-Semiconductor (MOS) capacitors fabricated on 4H-SiC with the SiO2 layer grown by Sodium-Enhanced Oxidation. This technique has yielded 4H-SiC MOS transistors with record channel mobility, although with poor bias stability. The effects of the mobile positive charge on the C-V characteristics and DLTS spectra were investigated by applying a sequence of positive and negative bias-temperature stresses, which drifted the sodium ions toward and away from the SiO2/4H-SiC interface, respectively. Analytical modeling of the C-V curves shows that the drift of sodium ions in the SiO2 layer during the voltage sweep can explain the temperature dependence of the C-V curves. The effects of lateral fluctuations of the surface potential (due to a non-uniform charge distribution) on the inversion layer mobility of MOS transistors are discussed within a two-dimensional percolation model.
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21 January 2014
Research Article|
January 15 2014
Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface
A. F. Basile;
A. F. Basile
a)
1
Department of Physics, Simon Fraser University
, Burnaby, British Columbia V5A 1S6, Canada
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A. C. Ahyi;
A. C. Ahyi
2
Department of Physics, Auburn University
, Auburn, Alabama 36849, USA
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L. C. Feldman;
L. C. Feldman
3
Department of Physics and Astronomy, Vanderbilt University
, Nashville, Tennessee 37235, USA
4
Institute of Advanced Materials, Devices and Nanotechnology, Rutgers University
, Piscataway, New Jersey 08854, USA
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J. R. Williams;
J. R. Williams
2
Department of Physics, Auburn University
, Auburn, Alabama 36849, USA
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P. M. Mooney
P. M. Mooney
1
Department of Physics, Simon Fraser University
, Burnaby, British Columbia V5A 1S6, Canada
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a)
Current address: Department of Physics, University of Bologna, Bologna 40127, Italy. Electronic mail: afbasile@gmail.com.
J. Appl. Phys. 115, 034502 (2014)
Article history
Received:
September 17 2013
Accepted:
December 23 2013
Citation
A. F. Basile, A. C. Ahyi, L. C. Feldman, J. R. Williams, P. M. Mooney; Effects of sodium ions on trapping and transport of electrons at the SiO2/4H-SiC interface. J. Appl. Phys. 21 January 2014; 115 (3): 034502. https://doi.org/10.1063/1.4861646
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