We present a method to separate coherent and incoherent contributions to cathodoluminescence from bulk materials by using angle-resolved cathodoluminescence spectroscopy. Using 5 and 30 keV electrons, we measure the cathodoluminescence spectra for Si, GaAs, Al, Ag, Au, and Cu and determine the angular emission distributions for Al, GaAs, and Si. Aluminium shows a clear dipolar radiation profile due to coherent transition radiation, while GaAs shows incoherent luminescence characterized by a Lambertian angular distribution. Silicon shows both transition radiation and incoherent radiation. From the angular data, we determine the ratio between the two processes and decompose their spectra. This method provides a powerful way to separate different radiative cathodoluminescence processes, which is useful for material characterization and in studies of electron- and light-matter interaction in metals and semiconductors.
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28 June 2014
Research Article|
June 26 2014
Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals
B. J. M. Brenny;
B. J. M. Brenny
Center for Nanophotonics,
FOM Institute AMOLF
, Science Park 104, 1098 XG Amsterdam, The Netherlands
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T. Coenen;
T. Coenen
Center for Nanophotonics,
FOM Institute AMOLF
, Science Park 104, 1098 XG Amsterdam, The Netherlands
Search for other works by this author on:
a)
Electronic mail: polman@amolf.nl
J. Appl. Phys. 115, 244307 (2014)
Article history
Received:
April 11 2014
Accepted:
June 14 2014
Citation
B. J. M. Brenny, T. Coenen, A. Polman; Quantifying coherent and incoherent cathodoluminescence in semiconductors and metals. J. Appl. Phys. 28 June 2014; 115 (24): 244307. https://doi.org/10.1063/1.4885426
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