A theoretical description for recombination kinetics of charge carriers in a disordered system with a broad energy distribution of localized states (DOS) is suggested. This kinetics is governed by the exchange of carriers between transport states and traps. Concentration transients in systems with Gaussian DOS, typical for organic semiconductors, appear much steeper than those obtained for systems with exponential DOS. This difference in recombination kinetics is caused by the difference in thermalization kinetics for these two types of the DOS functions. The comparison of the recombination transients for mobile and trapped carriers in exponential and Gaussian DOS might help to distinguish between these two possible shapes of the DOS using experimental data for transient photoconductivity and photoabsorption.

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