Metal/CaF2/p-Si(111) capacitors with the improved-quality several-nanometer-thick epitaxial fluorite films are examined, aiming at solidifying a candidacy of this material for barrier layers in silicon devices. Structural and transport properties of a thin crystalline dielectric are characterized by different experimental techniques. The measured current-voltage characteristics accompanied with simulation results demonstrate that the elastic tunneling electron injection takes place in the considered structures. The same result follows from the behavior of hot-electron-injection-related electroluminescence within the selected spectral intervals. The result is important considering a perspective of using the epitaxial fluorides as barrier layers in resonant tunneling diodes.

Topics
Surface collisions, Transport properties, Current-voltage characteristic, Resonant tunneling diodes, Dielectric properties, Epitaxy, Transition metals, Chemical elements, Gemstones, Inorganic compounds
1.
C.
 
Deiter
,
M.
 
Bierkandt
,
A.
 
Klust
,
C.
 
Kumpf
,
Y.
 
Su
,
O.
 
Bunk
,
R.
 
Feidenhans'l
, and
J.
 
Wollschläger
,
Phys. Rev. B
 
82
,
085449
(
2010
).
https://doi.org/10.1103/PhysRevB.82.085449
Google Scholar
Crossref
Search ADS
 
2.
M. I.
 
Vexler
,
N. S.
 
Sokolov
,
S. M.
 
Suturin
,
A. G.
 
Banshchikov
,
S. E.
 
Tyaginov
, and
T.
 
Grasser
,
J. Appl. Phys.
 
105
,
083716
(
2009
).
https://doi.org/10.1063/1.3110066
Google Scholar
Crossref
Search ADS
 
3.
M.
 
Watanabe
,
Y.
 
Iketani
, and
M.
 
Asada
,
Jpn. J. Appl. Phys., Part 2
 
39
,
L964
(
2000
).
https://doi.org/10.1143/JJAP.39.L964
Google Scholar
Crossref
Search ADS
 
4.
M.
 
Watanabe
,
T.
 
Funayama
,
T.
 
Teraji
, and
N.
 
Sakamaki
,
Jpn. J. Appl. Phys., Part 2
 
39
,
L716
(
2000
).
https://doi.org/10.1143/JJAP.39.L716
Google Scholar
Crossref
Search ADS
 
5.
K.
 
Sadakuni-Makabe
,
M.
 
Suzuno
,
K.
 
Harada
,
H.
 
Akinaga
, and
T.
 
Suemasu
,
Jpn. J. Appl. Phys., Part 1
 
49
,
060212
(
2010
).
https://doi.org/10.1143/JJAP.49.060212
Google Scholar
Crossref
Search ADS
 
6.
T.
 
Sunohara
,
K.
 
Kobayashi
,
M.
 
Umada
,
H.
 
Yanagihara
,
E.
 
Kita
,
H.
 
Akinaga
, and
T.
 
Suemasu
,
Jpn. J. Appl. Phys., Part 2
 
44
,
L715
(
2005
).
https://doi.org/10.1143/JJAP.44.L715
Google Scholar
Crossref
Search ADS
 
7.
T.
 
Waho
 and
F.
 
Yanagawa
,
IEEE Electron Devices Lett.
 
9
,
548
(
1988
).
https://doi.org/10.1109/55.17840
Google Scholar
Crossref
Search ADS
 
8.
M. I.
 
Vexler
,
N.
 
Asli
,
A. F.
 
Shulekin
,
B.
 
Meinerzhagen
, and
P.
 
Seegebrecht
,
Microelect. Eng.
 
59
,
161
(
2001
).
https://doi.org/10.1016/S0167-9317(01)00660-8
Google Scholar
Crossref
Search ADS
 
9.
M. I.
 
Vexler
,
S. E.
 
Tyaginov
,
Yu. Yu.
 
Illarionov
,
Y. K.
 
Sing
,
A. D.
 
Shenp
,
V. V.
 
Fedorov
, and
D. V.
 
Isakov
,
Semiconductors
 
47
,
686
(
2013
).
https://doi.org/10.1134/S1063782613050230
Google Scholar
Crossref
Search ADS
 
10.
A.
 
Schenk
,
Advanced Physical Models for Silicon Device Simulations
(
Springer
,
Wien, NY
,
1998
), Chap. 5.
Google Scholar
Crossref
Search ADS
 
11.
L. J.
 
Schowalter
 and
R. W.
 
Fathauer
,
Crit. Rev. Solid State Mater. Sci.
 
15
,
367
(
1989
).
https://doi.org/10.1080/10408438908243740
Google Scholar
Crossref
Search ADS
 
12.
A.
 
Ishizaka
 and
Y.
 
Shiraki
,
J. Electrochem. Soc.
 
133
,
666
(
1986
).
https://doi.org/10.1149/1.2108651
Google Scholar
Crossref
Search ADS
 
13.
B.
 
Majkusiak
 and
A.
 
Strojwas
,
J. Appl. Phys.
 
74
,
5638
(
1993
).
https://doi.org/10.1063/1.355307
Google Scholar
Crossref
Search ADS
 
14.
W. K.
 
Henson
,
K. Z.
 
Ahmed
,
E. M.
 
Vogel
,
J. R.
 
Hauser
,
J. J.
 
Wortman
,
R. D.
 
Venables
,
M.
 
Hu
, and
D.
 
Venables
,
IEEE Electron Devices Lett.
 
20
,
179
(
1999
).
https://doi.org/10.1109/55.753759
Google Scholar
Crossref
Search ADS
 
15.
M. A.
 
Green
,
F. D.
 
King
, and
J.
 
Shewchun
,
Solid State Electron.
 
17
,
551
(
1974
).
https://doi.org/10.1016/0038-1101(74)90172-5
Google Scholar
Crossref
Search ADS
 
16.
J.
 
Shewchun
,
M. A.
 
Green
, and
F. D.
 
King
,
Solid State Electron.
 
17
,
563
(
1974
).
https://doi.org/10.1016/0038-1101(74)90173-7
Google Scholar
Crossref
Search ADS
 
17.
Crystals with the Fluorite Structure: Electronic, Vibrational, and Defect Properties
, edited by
W.
 
Hayes
 (
Clarendon Press
,
Oxford
,
1974
).
Google Scholar
 
18.
M. I.
 
Vexler
,
Yu. Yu.
 
Illarionov
,
S. M.
 
Suturin
,
V. V.
 
Fedorov
, and
N. S.
 
Sokolov
,
Phys. Solid State
 
52
,
2357
(
2010
).
https://doi.org/10.1134/S1063783410110223
Google Scholar
Crossref
Search ADS
 
19.
E. V.
 
Ostroumova
 and
A. A.
 
Rogachev
,
Semiconductors
 
28
,
793
(
1994
).
Google Scholar
 
20.
Yu. Yu.
 
Illarionov
,
M. I.
 
Vexler
,
V. V.
 
Fedorov
,
S. M.
 
Suturin
, and
N. S.
 
Sokolov
,
Thin Solid Films
 
545
,
580
(
2013
).
https://doi.org/10.1016/j.tsf.2013.07.050
Google Scholar
Crossref
Search ADS
 
21.
J.
 
Bude
,
N.
 
Sano
, and
A.
 
Yoshii
,
Phys. Rev. B
 
45
,
5848
(
1992
).
https://doi.org/10.1103/PhysRevB.45.5848
Google Scholar
Crossref
Search ADS
 
22.
N. A.
 
Sobolev
, in
Advances in Light Emitting Materials
, edited by
B.
 
Monemar
 et al. (
Trans Tech Publications
,
2008
), pp.
79
–
100
.
Google Scholar
 
23.
N.
 
Asli
,
M. I.
 
Vexler
,
A. F.
 
Shulekin
,
P. D.
 
Yoder
,
I. V.
 
Grekhov
, and
P.
 
Seegebrecht
,
Microelectr. Reliab.
 
41
,
1071
(
2001
).
https://doi.org/10.1016/S0026-2714(01)00079-8
Google Scholar
Crossref
Search ADS
 
24.
E.
 
Cartier
,
J. C.
 
Tsang
,
M. V.
 
Fischetti
, and
D. A.
 
Buchanan
,
Microelectr. Eng.
 
36
,
103
(
1997
).
https://doi.org/10.1016/S0167-9317(97)00025-7
Google Scholar
Crossref
Search ADS
 
25.
Y.
 
Ding
,
D. P.
 
Poenar
, and
D. V.
 
Isakov
, in
19th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
(
Singapore
,
2012
), pp.
1
–
6
.
Google Scholar
 
© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
You do not currently have access to this content.