We investigate charging effects in CdTe and Cd1−xMnxTe quantum dots embedded in n-i-p diodes. The tunneling of holes out of the dots at reverse bias and hole injection at forward bias control the dot charge state and allow for its electric field tuning. Furthermore, we analyze the Stark shifts of the photoluminescence transitions and evaluate the effect of the electric field on the binding of the observed excitonic complexes. We find that the binding can be strengthened or weakened depending on the zero-field alignment of the electron and hole wavefunctions.
Stark spectroscopy of CdTe and CdMnTe quantum dots embedded in n-i-p diodes
Ł. Kłopotowski, K. Fronc, P. Wojnar, M. Wiater, T. Wojtowicz, G. Karczewski; Stark spectroscopy of CdTe and CdMnTe quantum dots embedded in n-i-p diodes. J. Appl. Phys. 28 May 2014; 115 (20): 203512. https://doi.org/10.1063/1.4878978
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