We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.
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21 May 2014
Research Article|
May 20 2014
Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning
C. Martella;
C. Martella
Dipartimento di Fisica,
Università di Genova
, via Dodecaneso 33, I-16146 Genova, Italy
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D. Chiappe;
D. Chiappe
Dipartimento di Fisica,
Università di Genova
, via Dodecaneso 33, I-16146 Genova, Italy
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C. Mennucci;
C. Mennucci
Dipartimento di Fisica,
Università di Genova
, via Dodecaneso 33, I-16146 Genova, Italy
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F. Buatier de Mongeot
F. Buatier de Mongeot
Dipartimento di Fisica,
Università di Genova
, via Dodecaneso 33, I-16146 Genova, Italy
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J. Appl. Phys. 115, 194308 (2014)
Article history
Received:
April 02 2014
Accepted:
May 04 2014
Citation
C. Martella, D. Chiappe, C. Mennucci, F. Buatier de Mongeot; Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning. J. Appl. Phys. 21 May 2014; 115 (19): 194308. https://doi.org/10.1063/1.4876753
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