Electrical 1/f noise is measured in thin films of CdSe, CdSe/CdS, ZnO, HgTe quantum dots and Au nanocrystals. The 1/f noise, normalized per nanoparticle, shows no systematic dependence on the nanoparticle material and the coupling material. However, over 10 orders of magnitude, it correlates well with the nearest neighbor conductance suggesting some universal magnitude of the 1/f noise in these granular conductors. In the hopping regime, the main mechanism of 1/f noise is determined to be mobility fluctuated. In the metallic regime obtained with gold nanoparticle films, the noise drops to a similar level as bulk gold films and with a similar temperature dependence.
REFERENCES
1.
D. V.
Talapin
, J. S.
Lee
, M. V.
Kovalenko
, and E. V.
Shevchenko
, Chem. Rev.
110
, 389
–458
(2010
).2.
M. B.
Weissman
, Rev. Mod. Phys.
60
, 537
–571
(1988
).3.
A. K.
Raychaudhuri
, Curr. Opin. Solid State Mater. Sci.
6
, 67
–85
(2002
).4.
J.
Bernamont
, Proc. Phys. Soc.
49
, A138
(1937
).5.
A. L.
McWhorter
, 1/f Noise and Germanium Surface Properties
(University of Pennsylvania
, Philadelphia
, 1957
).6.
P.
Dutta
and P. M.
Horn
, Rev. Mod. Phys.
53
, 497
–516
(1981
).7.
P.
Bak
, C.
Tang
, and K.
Wiesenfeld
, Phys. Rev. Lett.
59
, 381
–384
(1987
).8.
C.
Kurdak
, J.
Kim
, A.
Kuo
, J. J.
Lucido
, L. A.
Farina
, X.
Bai
, M. P.
Rowe
, and A. J.
Matzger
, Appl. Phys. Lett.
86
, 073506
(2005
).9.
S.
Keuleyan
, E.
Lhuillier
, V.
Brajuskovic
, and P.
Guyot-Sionnest
, Nature Photon.
5
, 489
–493
(2011
).10.
E.
Lhuillier
, S.
Keuleyan
, H.
Liu
, and P.
Guyot-Sionnest
, J. Electron. Mater.
41
, 2725
–2729
(2012
).11.
E.
Lhuillier
, S.
Keuleyan
, H.
Liu
, and P.
Guyot-Sionnest
, Chem. Mater.
25
, 1272
–1282
(2013
).12.
C. J.
Stolle
, T. B.
Harvey
, and B. A.
Korgel
, Curr. Opin. Chem. Eng.
2
, 160
–167
(2013
).13.
S.
Coe
, W.-K.
Woo
, M.
Bawendi
, and V.
Bulovic
, Nature
420
, 800
–803
(2002
).14.
H.
Liu
, A.
Pourret
, and P.
Guyot-Sionnest
, ACS Nano
4
, 5211
–5216
(2010
).15.
A.
Pandey
and P.
Guyot-Sionnest
, J. Chem. Phys.
127
, 104710
(2007
).16.
D. A.
Schwartz
, N. S.
Norberg
, Q. P.
Nguyen
, J. M.
Parker
, and D. R.
Gamelin
, J. Am. Chem. Soc.
125
, 13205
–13218
(2003
).17.
S.
Keuleyan
, E.
Lhuillier
, and P.
Guyot-Sionnest
, J. Am. Chem. Soc.
133
, 16422
–16424
(2011
).18.
S.
Peng
, Y.
Lee
, C.
Wang
, H.
Yin
, S.
Dai
, and S.
Sun
, Nano Res.
1
, 229
–234
(2008
).19.
C.
Parman
and J.
Kakalios
, Phys. Rev. Lett.
67
, 2529
–2532
(1991
).20.
S.
Kar
, A. K.
Raychaudhuri
, A.
Ghosh
, H.
von Lohneysen
, and G.
Weiss
, Phys. Rev. Lett.
91
, 216603
(2003
).21.
F. N.
Hooge
, Phys. Lett. A
29
, 139
–140
(1969
).22.
Y. K.
Su
, S. C.
Shei
, K. J.
Gan
, and M.
Yokoyama
, “Low-frequency noise performances of SiO2/InP metal–insulator-semiconductor field-effect transistor
,” IEEE URSI International Symposium on Signals, Systems, and Electronics
(1995
), pp. 175
–178
.23.
O.
Cohen
, Z.
Ovadyahu
, and M.
Rokni
, Phys. Rev. Lett.
69
, 3555
–3558
(1992
).24.
L. K. J.
Vandamme
, IEEE Trans. Electron Devices
41
, 2176
–2187
(1994
).25.
A.
Corradetti
, R.
Leoni
, R.
Carluccio
, G.
Fortunato
, C.
Reita
, F.
Plais
, and D.
Pribat
, Appl. Phys. Lett.
67
, 1730
–1732
(1995
).26.
L. K. J.
Vandamme
, X. S.
Li
, and D.
Rigaud
, IEEE Trans. Electron Devices
41
, 1936
–1945
(1994
).27.
K. R.
Nitin
, A. R.
David
, C.
Jin
, and A. R.
Mark
, Appl. Phys. Lett.
97
, 243501
(2010
).28.
D.
Yu
, C. J.
Wang
, and P.
Guyot-Sionnest
, Science
300
, 1277
–1280
, (2003
).29.
B. I.
Shklovskii
, Solid State Commun.
33
, 273
–276
(1980
).30.
B. I.
Shklovskii
, Phys. Rev. B
67
, 045201
(2003
).31.
A. L.
Burin
, B. I.
Shklovskii
, V. I.
Kozub
, Y. M.
Galperin
, and V.
Vinokur
, Phys. Rev. B
74
, 075205
(2006
).32.
V. I.
Kozub
, Solid State Commun.
97
, 843
–846
(1996
).33.
A. G.
Hunt
, J. Phys.: Condens. Matter
3
, 7831
–7842
(1991
).34.
A. G.
Hunt
, J. Phys.: Condens. Matter
10
, L303
(1998
).35.
A.
Zabet-Khosousi
, P.-E.
Trudeau
, Y.
Suganuma
, A.-A.
Dhirani
, and B.
Statt
, Phys. Rev. Lett.
96
, 156403
(2006
).36.
J. L.
Williams
and R. K.
Burdett
, J. Phys. C: Solid State Phys.
2
, 298
–307
(1969
).37.
J. H.
Scofield
, J. V.
Mantese
, and W. W.
Webb
, Phys. Rev. B
32
, 736
–742
(1985
).38.
A. H.
Verbruggen
, R. H.
Koch
, and C. P.
Umbach
, Phys. Rev. B
35
, 5864
–5867
(1987
).39.
J. W.
Eberhard
and P. M.
Horn
, Phys. Rev. B
18
, 6681
–6693
(1978
).40.
G.
Konstantatos
and E. H.
Sargent
, Infrared Phys. Technol.
54
(3
), 278
–282
(2011
).© 2014 AIP Publishing LLC.
2014
AIP Publishing LLC
You do not currently have access to this content.
