Shallow embedding of C+ ions (<2 nm) into commercial CoCrPt-based magnetic media using the filtered cathodic vacuum arc technique improves its anti-oxidation and anti-wear properties which are comparable to the conventionally used thicker carbon overcoats of ∼3 nm. The next generation L10 FePt media subjected to low energy embedment of C+ ions have the potential to provide reduced magnetic spacing along with smaller and thermally stable grains, which is pivotal for achieving areal densities beyond 1 Tb/in.2 However, the impact of low energy C+ ions embedding on the magnetics of FePt media is not known. Here, the magnetic properties of L10 FePt, post-shallow C+ ion embedment at 350 eV, were investigated. It was observed that bombardment of C+ ions in the 5 nm thick FePt films produced a monumental reduction of ∼86% in the out-of-plane coercivity value. Increasing the FePt film thickness did not significantly suppress the impact of these C+ ions on the media. Structural and elemental analyses attributed this alteration caused in the magnetic properties of the well-ordered FePt films to the penetration of >2 nm by the C+ ions into the FePt film. The media's crystallography with respect to the size and direction of the incoming ions has emerged to be accountable for the deeper distribution of the C+ ions and the associated widespread cascade damages within the magnetic layer. The consequences of low energy C+ ions embedding to attain high storage densities using high anisotropy L10 FePt media are discussed.
Skip Nav Destination
Article navigation
7 January 2014
Research Article|
January 07 2014
Low energy C+ ion embedment induced structural disorder in L1 FePt
Shreya Kundu;
Shreya Kundu
1
Department of Electrical and Computer Engineering, National University of Singapore
, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore
2
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)
, 3 Research Link, Singapore 117602, Republic of Singapore
Search for other works by this author on:
Ehsan Rismani-Yazdi;
Ehsan Rismani-Yazdi
1
Department of Electrical and Computer Engineering, National University of Singapore
, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore
Search for other works by this author on:
M. S. M. Saifullah;
M. S. M. Saifullah
2
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)
, 3 Research Link, Singapore 117602, Republic of Singapore
Search for other works by this author on:
Hui Ru Tan;
Hui Ru Tan
2
Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research)
, 3 Research Link, Singapore 117602, Republic of Singapore
Search for other works by this author on:
Hyunsoo Yang;
Hyunsoo Yang
1
Department of Electrical and Computer Engineering, National University of Singapore
, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore
Search for other works by this author on:
C. S. Bhatia
C. S. Bhatia
a)
1
Department of Electrical and Computer Engineering, National University of Singapore
, 21 Lower Kent Ridge Road, Singapore 117576, Republic of Singapore
Search for other works by this author on:
a)
Author to whom correspondence should be addressed. Electronic mail: elebcs@nus.edu.sg
J. Appl. Phys. 115, 013907 (2014)
Article history
Received:
November 17 2013
Accepted:
December 12 2013
Citation
Shreya Kundu, Ehsan Rismani-Yazdi, M. S. M. Saifullah, Hui Ru Tan, Hyunsoo Yang, C. S. Bhatia; Low energy C+ ion embedment induced structural disorder in L1 FePt. J. Appl. Phys. 7 January 2014; 115 (1): 013907. https://doi.org/10.1063/1.4860295
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
Impulse coupling enhancement of aluminum targets under laser irradiation in a soft polymer confined geometry
C. Le Bras, E. Lescoute, et al.
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.
Related Content
The effect of residual strain on (001) texture evolution in FePt thin film during postannealing
J. Appl. Phys. (November 2006)
High coercive FePt and FePt-SiNx(001) films with small grain size and narrow opening-up of in-plane hysteresis loop by TiN intermediate layer
J. Appl. Phys. (August 2011)
Spacer-less, decoupled granular L1 FePt magnetic media using Ar–He sputtering gas
J. Appl. Phys. (December 2012)
Effects of forming gas annealing on low-temperature ordering of FePt films
J. Appl. Phys. (May 2005)
Magnetic properties and microstructure of L1-FePt/AlN perpendicular nanocomposite films
J. Appl. Phys. (September 2011)