Temperature dependence of the single-photon sensitivity of a quantum dot, optically gated, field-effect transistor Available to Purchase

We present a systematic study of the temperature dependence of the electrical noise in a quantum dot, optically gated, field-effect transistor (QDOGFET) and detail how the noise influences the sensitivity of these novel single-photon detectors. Previous studies have shown that when cooled to 4 K, QDOGFETs exhibit single-photon sensitivity and photon-number-resolving capabilities; however, there has been no systematic study of how operating temperature affects their performance. Here, we measure the noise spectra of a device for a range of sample temperatures between 7 K and 60 K. We use the noise data to determine the signal-to-noise ratio of the optical responses of the devices for various temperatures and detection rates. Our analysis indicates that QDOGFETs can operate over a broad range of temperatures, where increased operating temperature can be traded for decreased sensitivity.