Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiSFETs) concept, as well as other novel device concepts requiring a graphene interlayer dielectric. Using density functional theory, we study the structural and electronic properties of bilayer graphene intercalated with iodine monochloride (ICl) and iodine monobromide (IBr). We determine the structural configuration of ICl and IBr graphene intercalation compounds (GICs). We also conduct an in-depth exploration of inter-layer electronic coupling, using ab initio calculations. The presence of intercalants dopes the graphene layer. It also reduces, but does not eliminate, the electronic coupling between graphene layers, which may enable BiSFET operation. In addition, we present experimental results for ICl-GIC synthesis and characterization.
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14 August 2013
Research Article|
August 08 2013
Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications
Priyamvada Jadaun;
Priyamvada Jadaun
a)
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Hema C. P. Movva;
Hema C. P. Movva
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Leonard F. Register;
Leonard F. Register
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Sanjay K. Banerjee
Sanjay K. Banerjee
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
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Priyamvada Jadaun
a)
Hema C. P. Movva
Leonard F. Register
Sanjay K. Banerjee
Microelectronics Research Center, The University of Texas at Austin
, Austin, Texas 78758, USA
J. Appl. Phys. 114, 063702 (2013)
Article history
Received:
February 18 2013
Accepted:
July 22 2013
Citation
Priyamvada Jadaun, Hema C. P. Movva, Leonard F. Register, Sanjay K. Banerjee; Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications. J. Appl. Phys. 14 August 2013; 114 (6): 063702. https://doi.org/10.1063/1.4817498
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