We report the results of a thorough numerical study on carrier mobility in graphene nanoribbons (GNRs) with the widths from ∼250 nm down to ∼1 nm, with a focus on the influence of substrate type (SiO2, Al2O3, HfO2, and h-BN) and substrate quality (different interface impurity densities) on GNR mobility. We identify the interplay between the contributions of Coulomb and surface optical phonon scattering as the crucial factor that determines the optimum substrate in terms of carrier mobility. In the case of high impurity density (∼1013 cm−2), we find that HfO2 is the optimum substrate irrespective of GNR width. In contrast, for low impurity density (1010 cm−2), h-BN offers the greatest enhancement, except for nanoribbons wider than ∼200 nm for which the mobility is highest on HfO2.

1.
K. S.
Novoselov
,
A. K.
Geim
,
S. V.
Morozov
,
D.
Jiang
,
Y.
Zhang
,
S. V.
Dubonos
,
I. V.
Grigorieva
, and
A. A.
Firsov
,
Science
306
,
666
(
2004
).
2.
A. H.
Castro Neto
,
F.
Guinea
,
N. M. R.
Peres
,
K. S.
Novoselov
, and
A. K.
Geim
,
Rev. Mod. Phys.
81
,
109
(
2009
).
3.
I.
Meric
,
M. Y.
Han
,
A. F.
Young
,
B.
Ozyilmaz
,
P.
Kim
, and
K. L.
Shepard
,
Nat. Nanotechnol.
3
,
654
(
2008
).
4.
Y.-M.
Lin
,
K. A.
Jenkins
,
A.
Valdes-Garcia
,
J. P.
Small
,
D. B.
Farmer
, and
P.
Avouris
,
Nano Lett.
9
,
422
(
2009
).
5.
F.
Schwierz
,
Nat. Nanotechnol.
5
,
487
(
2010
).
6.
X.
Li
,
X.
Wang
,
L.
Zhang
,
S.
Lee
, and
H.
Dai
,
Science
319
,
1229
(
2008
).
7.
X.
Wang
,
Y.
Ouyang
,
X.
Li
,
H.
Wang
,
J.
Guo
, and
H.
Dai
,
Phys. Rev. Lett.
100
,
206803
(
2008
).
8.
M. Y.
Han
,
B.
Özyilmaz
,
Y.
Zhang
, and
P.
Kim
,
Phys. Rev. Lett.
98
,
206805
(
2007
).
9.
Y.
Ouyang
,
Y.
Yoon
, and
J.
Guo
,
IEEE Trans. Electron Devices
54
,
2223
(
2007
).
10.
Y.
Ouyang
,
H.
Dai
, and
J.
Guo
,
Nano Res.
3
,
8
(
2010
).
11.
K. I.
Bolotin
,
K. J.
Sikes
,
Z.
Jiang
,
M.
Klima
,
G.
Fudenberg
,
J.
Hone
,
P.
Kim
, and
H. L.
Stormer
,
Solid State Commun.
146
,
351
(
2008
).
12.
V.
Perebeinos
and
P.
Avouris
,
Phys. Rev. B
81
,
195442
(
2010
).
13.
A.
Konar
,
T.
Fang
, and
D.
Jena
,
Phys. Rev. B
82
,
115452
(
2010
).
14.
X.
Li
,
E. A.
Barry
,
J. M.
Zavada
,
M.
Buongiorno Nardelli
, and
K. W.
Kim
,
Appl. Phys. Lett.
97
,
232105
(
2010
).
15.
T.
Fang
,
A.
Konar
,
H.
Xing
, and
D.
Jena
,
Phys. Rev. B
78
,
205403
(
2008
).
16.
A.
Betti
,
G.
Fiori
, and
G.
Iannaccone
,
IEEE Trans. Electron Devices
58
,
2824
(
2011
).
17.
M.
Bresciani
,
P.
Palestri
,
D.
Esseni
, and
L.
Selmi
,
Solid-State Electron.
54
,
1015
(
2010
).
18.
C. R.
Dean
,
A. F.
Young
,
I.
Meric
,
C.
Lee
,
L.
Wang
,
S.
Sorgenfrei
,
K.
Watanabe
,
T.
Taniguchi
,
P.
Kim
,
K. L.
Shepard
, and
J.
Hone
,
Nat. Nanotechnol.
5
,
722
(
2010
).
19.
I.
Meric
,
C.
Dean
,
A.
Young
,
J.
Hone
,
P.
Kim
, and
K. L.
Shepard
,
Tech. Dig. Int. Electron Devices Meet.
2010
,
23
2
.
20.
H.
Wang
,
T.
Taychatanapat
,
A.
Hsu
,
K.
Watanabe
,
T.
Taniguchi
,
P.
Jarillo-Herrero
, and
T.
Palacios
,
IEEE Electron Device Lett.
32
,
1209
(
2011
).
21.
Y.
Zhu
,
Z.
Sun
,
Z.
Yan
,
Z.
Jin
, and
J. M.
Tour
,
ACS Nano
5
,
6472
(
2011
).
22.
M.
Voutilainen
,
E. T.
Seppala
,
P.
Pasanen
, and
M.
Oksanen
,
IEEE Trans. Electron Devices
59
,
2876
(
2012
).
23.
D.
Esseni
,
P.
Palestri
, and
L.
Selmi
,
Nanoscale MOS Transistors: Semi-Classical Transport and Applications
(
Cambridge University Press
,
New York
,
2011
).
24.
M.
Lundstrom
,
Fundamentals of Carrier Transport
, 2nd ed. (
Cambridge University Press
,
New York
,
2000
).
25.
D. K.
Ferry
,
S. M.
Goodnick
, and
J.
Bird
,
Transport in Nanostructures
, 2nd ed. (
Cambridge University Press
,
New York
,
2009
).
26.
M.
Lundstrom
,
T.
Low
, and
D.
Berdebes
,
Lecture Notes on Low Bias Transport in Graphene: An Introduction
(
NCN Purdue Summer School
,
2009
), http://nanohub.org/resources/7435.
27.
S.
Fratini
and
F.
Guinea
,
Phys. Rev. B
77
,
195415
(
2008
).
28.
T.
Stauber
,
N. M. R.
Peres
, and
F.
Guinea
,
Phys. Rev. B
76
,
205423
(
2007
).
29.
D.
Esseni
,
A.
Abramo
,
L.
Selmi
, and
E.
Sangiorgi
,
IEEE Trans. Electron Devices
50
,
2445
(
2003
).
30.
Y.
Yang
and
R.
Murali
,
IEEE Electron Device Lett.
31
,
237
(
2010
).
31.
D. J.
Wouters
,
M. R.
Tack
,
G. V.
Groeseneken
,
H. E.
Maes
, and
C. L.
Claeys
,
IEEE Trans. Electron Devices
36
,
1746
(
1989
).
32.
G.
Kapila
,
B.
Kaczer
,
A.
Nackaerts
,
N.
Collaert
, and
G. V.
Groeseneken
,
IEEE Electron Device Lett.
28
,
232
(
2007
).
You do not currently have access to this content.