The magnetic properties of Mg-doped BiFeO3 (BFO) with and without oxygen vacancies are studied through first-principles calculations. The Mg-doping prefers to occupy the ferromagnetic planes and produces an obvious improved magnetization, and the magnetization is linearly enhanced with increasing Mg-doped content, which is consistent with the trend reported in experiment. However, our calculated result is significantly larger than the experimental one, and the reason is revealed that the relative energy differences of various spin-ordering configurations are small. Furthermore, oxygen vacancy in Mg-doped BFO can further enhance the magnetization, while keeping the insulating band gap character. The calculated results imply that the oxygen vacancy in Mg-doped BFO would be an effective way to improve the multiferroicity of BFO.
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21 December 2013
Research Article|
December 19 2013
First-principles study on the magnetic properties in Mg doped BiFeO3 with and without oxygen vacancies
Ruipeng Yang;
Ruipeng Yang
1
Institute for Advanced Materials
, South China Normal University
, Guangzhou 510006, China
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Sixian Lin;
Sixian Lin
1
Institute for Advanced Materials
, South China Normal University
, Guangzhou 510006, China
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Xiaogong Fang;
Xiaogong Fang
1
Institute for Advanced Materials
, South China Normal University
, Guangzhou 510006, China
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Xingsen Gao;
Xingsen Gao
1
Institute for Advanced Materials
, South China Normal University
, Guangzhou 510006, China
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Min Zeng;
Min Zeng
a)
1
Institute for Advanced Materials
, South China Normal University
, Guangzhou 510006, China
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Junming Liu
Junming Liu
b)
2
Laboratory of Solid State Microstructures
, Nanjing University
, Nanjing 210093, China
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a)
E-mail: zengmin@scnu.edu.cn
b)
E-mail: liujm@nju.edu.cn
J. Appl. Phys. 114, 233912 (2013)
Article history
Received:
October 01 2013
Accepted:
December 04 2013
Citation
Ruipeng Yang, Sixian Lin, Xiaogong Fang, Xingsen Gao, Min Zeng, Junming Liu; First-principles study on the magnetic properties in Mg doped BiFeO3 with and without oxygen vacancies. J. Appl. Phys. 21 December 2013; 114 (23): 233912. https://doi.org/10.1063/1.4850975
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