During the ion-assisted deposition of a binary material, the ion beam can induce the formation of nanoscale ripples on the surface of the growing thin film and compositional banding within its bulk. We demonstrate that this remains true even if the curvature dependence of the sputter yields and ballistic mass redistribution are negligible, and the two atomic species are completely miscible. The concentration of the species with the lower of the two sputter yields is higher at the crests of the ripples than at their troughs. Depending on the angles of incidence of the two atomic species, the incident flux of atoms with the higher sputter yield can either stabilize or destabilize the initially flat surface of the thin film.
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Research Article| December 10 2013
Nanoscale compositional banding in binary thin films produced by ion-assisted deposition
R. Mark Bradley; Nanoscale compositional banding in binary thin films produced by ion-assisted deposition. J. Appl. Phys. 14 December 2013; 114 (22): 224306. https://doi.org/10.1063/1.4842975
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