Defect-related energy levels in the lower half of the band gap of silicon have been studied with transient-capacitance techniques in high-purity, carbon and oxygen lean, plasma-enhanced chemical-vapor deposition grown, n-and p-type silicon layers after 2-MeV proton irradiations at temperatures at or just below room temperature. The in-growth of a distinct line in deep-level transient spectroscopy spectra, corresponding to a level in the band gap at EV + 0.357 eV where EV is the energy of the valence band edge, takes place for anneal temperatures at around room temperature with an activation energy of 0.95 ± 0.08 eV. The line disappears at an anneal temperature of around 450 K. The corresponding defect is demonstrated not to contain boron, carbon, oxygen, or phosphorus. Possible defect candidates are discussed.
In-growth of an electrically active defect in high-purity silicon after proton irradiation
A. Nylandsted Larsen, H. Juul Pedersen, M. Christian Petersen, V. Privitera, Y. Gurimskaya, A. Mesli; In-growth of an electrically active defect in high-purity silicon after proton irradiation. J. Appl. Phys. 14 December 2013; 114 (22): 223706. https://doi.org/10.1063/1.4841175
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