In the recent years, InGaN/GaN quantum well (QW) light emitting diodes (LEDs) have gathered much importance through the introduction of white LEDs and dual wavelength LEDs. However, the continuous tunability of InGaN/GaN QW LEDs has not been well addressed or discussed. In this paper, we introduce the tunability of an InGaN/GaN QW LED having a well width of 4 nm and In mole fraction of 0.3. The results, obtained from self-consistent solutions of the Schrödinger and Poisson equations, show that the transition energy of the LED may be continuously tuned by the device current. A prominent nonlinearity of the transition energy with the device current is generated, which should be of interest to the research workers in the field of optoelectronics.
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14 July 2013
Research Article|
July 12 2013
Tunability of InGaN/GaN quantum well light emitting diodes through current
Dipankar Biswas;
Dipankar Biswas
a)
Institute of Radiophysics and Electronics, University of Calcutta
, 92 A. P. C. Road, Kolkata 700009, India
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Siddhartha Panda
Siddhartha Panda
Institute of Radiophysics and Electronics, University of Calcutta
, 92 A. P. C. Road, Kolkata 700009, India
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a)
Electronic mail: [email protected]
J. Appl. Phys. 114, 023105 (2013)
Article history
Received:
April 24 2013
Accepted:
June 20 2013
Citation
Dipankar Biswas, Siddhartha Panda; Tunability of InGaN/GaN quantum well light emitting diodes through current. J. Appl. Phys. 14 July 2013; 114 (2): 023105. https://doi.org/10.1063/1.4813225
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