4H-SiC homoepitaxial layers free of basal plane dislocations (BPDs) are urgently needed to overcome the so-called bipolar degradation of high-voltage devices. BPDs being present in substrates are able to either propagate to the epilayer or convert to harmless threading edge dislocations (TEDs) in the epilayer. The model by Klapper predicts the conversion of BPDs to TEDs to be more efficient for growth on vicinal substrates with low off-cut angle. This paper aims to verify the model by Klapper by an extensive variation of epitaxial growth parameters and the substrates' off-cut. It is shown that the off-cut angle is the key parameter for growth of BPD-free epilayers. Furthermore, it is shown that the model also describes adequately the behavior of different types of TEDs, i.e., TED II and TED III dislocations, during epitaxial growth. Therefore, the model by Klapper is verified successfully for 4H-SiC homoepitaxial growth on vicinal substrates.
Skip Nav Destination
Article navigation
14 November 2013
Research Article|
November 11 2013
Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates
Birgit Kallinger;
Birgit Kallinger
a)
1
Department of Crystal Growth, Fraunhofer IISB, Schottkystr
. 10, 91058 Erlangen, Germany
Search for other works by this author on:
Sebastian Polster;
Sebastian Polster
2
Chair of Electron Devices, University of Erlangen-Nuremberg
, Cauerstr. 6, 91058 Erlangen, Germany
Search for other works by this author on:
Patrick Berwian;
Patrick Berwian
1
Department of Crystal Growth, Fraunhofer IISB, Schottkystr
. 10, 91058 Erlangen, Germany
Search for other works by this author on:
Jochen Friedrich;
Jochen Friedrich
1
Department of Crystal Growth, Fraunhofer IISB, Schottkystr
. 10, 91058 Erlangen, Germany
Search for other works by this author on:
Andreas N. Danilewsky
Andreas N. Danilewsky
3
Crystallography, Institute of Geo- and Environmental Natural Sciences, University of Freiburg
, Hermann-Herder-Str. 5, 79194 Freiburg, Germany
Search for other works by this author on:
J. Appl. Phys. 114, 183507 (2013)
Article history
Received:
July 26 2013
Accepted:
October 24 2013
Citation
Birgit Kallinger, Sebastian Polster, Patrick Berwian, Jochen Friedrich, Andreas N. Danilewsky; Experimental verification of the model by Klapper for 4H-SiC homoepitaxy on vicinal substrates. J. Appl. Phys. 14 November 2013; 114 (18): 183507. https://doi.org/10.1063/1.4829707
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Machine learning for thermal transport
Ruiqiang Guo, Bing-Yang Cao, et al.
Related Content
Evolution of basal plane dislocations during 4 H -silicon carbide homoepitaxy
Appl. Phys. Lett. (October 2005)
Glide and multiplication of basal plane dislocations during 4 H ‐ Si C homoepitaxy
J. Appl. Phys. (November 2007)
Morphology of basal plane dislocations in 4 H - Si C homoepitaxial layers grown by chemical vapor deposition
J. Appl. Phys. (March 2007)