Localization effects on the optical properties of GaAs1−xBix/GaAs single quantum wells (SQWs), with Bi contents ranging from x = 1.1% to 6.0%, are investigated using continuous-wave and time-resolved photoluminescence. The temperature- and excitation density dependence of the PL spectra are systematically studied, and the carrier recombination mechanisms are analyzed. At low temperatures, the time-integrated PL emission is dominated by the recombination of localized electron-hole pairs due to the varying content and clustering of Bi in the alloy. The extracted energy scales fluctuate tremendously when the Bi content is varied with a weak tendency to increase with Bi content. Relatively low energy scales are found for the SQW with x = 5.5%, which makes it a potential candidate for long-wavelength optoelectronic devices.
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28 October 2013
Research Article|
October 23 2013
Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells
M. K. Shakfa;
M. K. Shakfa
a)
1
Department of Physics and Materials Sciences Center, Philipps-University of Marburg
, Renthof 5, D-35032 Marburg, Germany
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D. Kalincev;
D. Kalincev
1
Department of Physics and Materials Sciences Center, Philipps-University of Marburg
, Renthof 5, D-35032 Marburg, Germany
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X. Lu;
X. Lu
2
Department of Electrical Engineering, Arizona State University
, Tempe, Arizona 85287-6206, USA
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S. R. Johnson;
S. R. Johnson
2
Department of Electrical Engineering, Arizona State University
, Tempe, Arizona 85287-6206, USA
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D. A. Beaton;
D. A. Beaton
3
Department of Physics and Astronomy, University of British Columbia
, Vancouver, British Columbia V6T 1Z4, Canada
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T. Tiedje;
T. Tiedje
4
Department of Electrical and Computer Engineering, University of Victoria
, Victoria, British Columbia V8W 3P6, Canada
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A. Chernikov;
A. Chernikov
1
Department of Physics and Materials Sciences Center, Philipps-University of Marburg
, Renthof 5, D-35032 Marburg, Germany
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S. Chatterjee;
S. Chatterjee
1
Department of Physics and Materials Sciences Center, Philipps-University of Marburg
, Renthof 5, D-35032 Marburg, Germany
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M. Koch
M. Koch
1
Department of Physics and Materials Sciences Center, Philipps-University of Marburg
, Renthof 5, D-35032 Marburg, Germany
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a)
Electronic mail: [email protected]
J. Appl. Phys. 114, 164306 (2013)
Article history
Received:
July 21 2013
Accepted:
October 07 2013
Citation
M. K. Shakfa, D. Kalincev, X. Lu, S. R. Johnson, D. A. Beaton, T. Tiedje, A. Chernikov, S. Chatterjee, M. Koch; Quantitative study of localization effects and recombination dynamics in GaAsBi/GaAs single quantum wells. J. Appl. Phys. 28 October 2013; 114 (16): 164306. https://doi.org/10.1063/1.4826621
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