The influence of bismuth (Bi) substitution on the thermoelectric properties of AgSbTe2 compounds was investigated and compared with the undoped AgSbTe2. The addition of Bi dopants not only resulted in a reduction in thermal conductivity but also markedly increased the thermopower in the Ag(Sb1−xBix)Te2 series. Additional phonon scatterings were created by Bi doping and led to a reduction of thermal conductivity. The lattice thermal conductivity is significantly reduced which could be ascribed to enhancement of phonon scattering by dopants with greater atomic weight. In addition, the thermopower was enhanced, which was attributed to the electron-filtering effects caused by the nanoscaled microstructures. Because of the extremely low thermal conductivity (0.48 Wm−1K−1) and moderate power factor of AgBi0.05Sb0.95Te2, a maximum ZT value of (1.04 ± 0.08) was reached at 570 K; yielding an enhancement of greater than 10% compared with an undoped AgSbTe2. this result shows promising thermoelectric properties in the medium temperature range.
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28 October 2013
Research Article|
October 31 2013
Enhanced thermoelectric performance in Bi-doped p-type AgSbTe2 compounds
Rajeshkumar Mohanraman;
Rajeshkumar Mohanraman
a)
1
Department of Engineering and System Science, National Tsing Hua University
, Hsinchu, Taiwan
2
Institute of Physics, Academia Sinica
, Taipei, Taiwan
3
Nano Science and Technology, Taiwan International Graduate Program, Academia Sinica
, Taipei, Taiwan
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Raman Sankar;
Raman Sankar
4
Center for Condensed Matter Sciences, National Taiwan University
, Taipei, Taiwan
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F. C. Chou;
F. C. Chou
4
Center for Condensed Matter Sciences, National Taiwan University
, Taipei, Taiwan
5
National Synchrotron Radiation Research Center
, Hsinchu, Taiwan
6
Center for Emerging Material and Advanced Devices, National Taiwan University
, Taipei, Taiwan
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C. H. Lee;
C. H. Lee
1
Department of Engineering and System Science, National Tsing Hua University
, Hsinchu, Taiwan
5
National Synchrotron Radiation Research Center
, Hsinchu, Taiwan
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Yang-Yuan Chen
Yang-Yuan Chen
a)
2
Institute of Physics, Academia Sinica
, Taipei, Taiwan
7
Graduate Institute of Applied Physics, National Chengchi University
, Taipei, Taiwan
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a)
Authors to whom correspondence should be addressed. Electronic addresses: rajeshx@phys.sinica.edu.tw. Tel.: 886-2-2817-5274 and cheny2@phys.sinica.edu.tw. Tel.: 886-2-2789-6725. Fax: 886-2-2783-4187.
J. Appl. Phys. 114, 163712 (2013)
Article history
Received:
May 20 2013
Accepted:
October 16 2013
Citation
Rajeshkumar Mohanraman, Raman Sankar, F. C. Chou, C. H. Lee, Yang-Yuan Chen; Enhanced thermoelectric performance in Bi-doped p-type AgSbTe2 compounds. J. Appl. Phys. 28 October 2013; 114 (16): 163712. https://doi.org/10.1063/1.4828478
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