Ultraviolet photoluminescence, transmission electron microscopy and KOH etching were used to characterize extended defects in 4H-SiC epilayers grown at high growth rates (18 μm/h). Layers exhibited high densities of in-grown stacking faults and dislocation half-loops. The stacking faults were 8H Shockley-type faults. The Burgers vector of the dislocation half-loops was in the (0001) basal plane. Both defects nucleate within the epilayer at early stages of growth. Defect nucleation is directly correlated with high initial growth rate and is not related to any defects/heterogeneities in the substrate or epilayer. Epilayer growth by nucleation of two-dimensional islands is proposed as a possible mechanism for the formation of both defects, through nucleation of faulted Si-C bilayers.
Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy
M. Abadier, R. L. Myers-Ward, N. A. Mahadik, R. E. Stahlbush, V. D. Wheeler, L. O. Nyakiti, C. R. Eddy, D. K. Gaskill, H. Song, T. S. Sudarshan, Y. N. Picard, M. Skowronski; Nucleation of in-grown stacking faults and dislocation half-loops in 4H-SiC epitaxy. J. Appl. Phys. 28 September 2013; 114 (12): 123502. https://doi.org/10.1063/1.4821242
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