Diamond surface channel field effect transistors were passivated with thin AlN layers grown by metal-organic chemical vapor deposition in order to improve the chemical stability of the surface-near p-type channel. Electrical characterization showed that the surface-near conductivity in the diamond is preserved during AlN overgrowth if the process temperature does not exceed 800 °C. However, the sheet carrier density is decreased by a factor of about 5 compared to the unpassivated hydrogen-terminated surface. A combination of TEM and XPS analysis showed that this effect is not induced by a partial modification of the surface termination or by a polarization of the AlN passivation. The preserved, but reduced surface-near conductivity in the diamond can however be explained by a hydrogen double bond between the diamond and the AlN film. Field-effect transistor structures fabricated on the passivated diamond substrates showed stable operation up drain-source voltages to −70 V and might therefore be promising candidates for future high-voltage applications.
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21 September 2013
Research Article|
September 17 2013
Analysis of diamond surface channel field-effect transistors with AlN passivation layers
C. Pietzka;
C. Pietzka
a)
1
Institute of Electron Devices and Circuits, Ulm University
, Germany
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J. Scharpf;
J. Scharpf
1
Institute of Electron Devices and Circuits, Ulm University
, Germany
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M. Fikry;
M. Fikry
2
Institute of Optoelectronics, Ulm University
, Germany
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D. Heinz;
D. Heinz
2
Institute of Optoelectronics, Ulm University
, Germany
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K. Forghani;
K. Forghani
2
Institute of Optoelectronics, Ulm University
, Germany
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T. Meisch;
T. Meisch
2
Institute of Optoelectronics, Ulm University
, Germany
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Th. Diemant;
Th. Diemant
3
Institute of Surface Chemistry and Catalysis, Ulm University
, Germany
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R. J. Behm;
R. J. Behm
3
Institute of Surface Chemistry and Catalysis, Ulm University
, Germany
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J. Bernhard;
J. Bernhard
4
Central Facility of Electron Microscopy, Ulm University
, Germany
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J. Biskupek;
J. Biskupek
4
Central Facility of Electron Microscopy, Ulm University
, Germany
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U. Kaiser;
U. Kaiser
4
Central Facility of Electron Microscopy, Ulm University
, Germany
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F. Scholz;
F. Scholz
2
Institute of Optoelectronics, Ulm University
, Germany
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E. Kohn
E. Kohn
1
Institute of Electron Devices and Circuits, Ulm University
, Germany
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J. Appl. Phys. 114, 114503 (2013)
Article history
Received:
June 25 2013
Accepted:
August 13 2013
Citation
C. Pietzka, J. Scharpf, M. Fikry, D. Heinz, K. Forghani, T. Meisch, Th. Diemant, R. J. Behm, J. Bernhard, J. Biskupek, U. Kaiser, F. Scholz, E. Kohn; Analysis of diamond surface channel field-effect transistors with AlN passivation layers. J. Appl. Phys. 21 September 2013; 114 (11): 114503. https://doi.org/10.1063/1.4819453
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