Improving the electron mobility of devices such as Ge metal oxide semiconductor field effect transistors requires good Ge/dielectric interfaces. GeO2 thus is reconsidered as a passivation layer for Ge. However, O-vacancies need to be controlled as they have a deleterious impact on the properties. We employ electronic structure calculations to investigate the introduction of trivalent ions (Al, Y, and La) in α-quartz GeO2. The binding energies of the dopant-vacancy pairs reveal that dopants can be used to control the O-vacancies and reduce the induced dangling bonds. It is proposed that the introduction of Al will limit the concentration of O-vacancies at low Fermi energy.
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Research Article| February 28 2013
Mechanism of dopant-vacancy association in α-quartz GeO2
H. Wang, A. Chroneos, U. Schwingenschlögl; Mechanism of dopant-vacancy association in α-quartz GeO2. J. Appl. Phys. 28 February 2013; 113 (8): 083716. https://doi.org/10.1063/1.4793786
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